Data Sheet No. PD60261
IRS2109/IRS21094(S)PbF
HALF-BRIDGE DRIVER
Product Summary
Features
Floating channel designed for bootstrap operation
•
Fully operational to +600 V
•
Tolerant to negative transient voltage, dV/dt
•
immune
V
600 V max.
OFFSET
Gate drive supply range from 10 V to 20 V
•
Undervoltage lockout for both channels
•
I +/-
O
120 mA / 250 mA
10 V - 20 V
3.3 V, 5 V, and 15 V input logic compatible
Cross-conduction prevention logic
•
V
OUT
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Matched propagation delay for both channels
•
t
(typ.)
750 ns & 200 ns
540 ns
on/off
High-side output in phase with IN input
Logic and power ground +/- 5 V offset.
•
•
Deadtime
(programmable up to 5 µs for IRS21094)
Internal 540 ns deadtime, and programmable
•
up to 5 µs with one external R resistor (IRS21094)
DT
Lower di/dt gate driver for better noise immunity
•
Shutdown input turns off both channels.
•
Packages
• RoHS compliant
Description
The IRS2109/IRS21094 are high voltage, high
speed power MOSFET and IGBT drivers with de-
pendent high- and low-side referenced output
channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic
construction. The logic input is compatible with stan-
dard CMOS or LSTTL output, down to 3.3 V logic.
The output drivers feature a high pulse current
buffer stage designed for minimum driver cross-con-
duction. The floating channel can be used to drive
an N-channel power MOSFET or IGBT in the high-
side configuration which operates up to 600 V.
8 Lead SOIC
14 Lead SOIC
14 Lead PDIP
8 Lead PDIP
Typical Connection
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IRS21094
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IRS2109
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(Refer to Lead Assignments for correct
configuration). These diagrams show electrical
connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
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www.irf.com
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