Datasheet > IRS21091S

IRS21091S

更新时间： 2024-11-19 15:18:51

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动双极性晶体管光电二极管驱动器
页数	文件大小	规格书
20页	752K
描述
600 V 半桥驱动器 IC，具有典型的 0.29 A 拉电流和 0.6 A 灌电流，采用 8 引脚 SOIC 封装，适用于 IGBT 和 MOSFET。也有 8 引脚 PDIP 封装可选。

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数据手册

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IRS21091S 数据手册

Data Sheet No. PD60311

IRS21091(S)PbF

HALF-BRIDGE DRIVER

Features

Floating channel designed for bootstrap operation

Fully operational to +600 V

Tolerant to negative transient voltage, dV/dt

immune

Gate drive supply range from 10 V to 20 V

Undervoltage lockout for both channels

3.3 V, 5 V, and 15 V input logic compatible

Cross-conduction prevention logic

Matched propagation delay for both channels

High-side output in phase with IN input

Logic and power ground +/- 5 V offset

Internal 500 ns deadtime, and programmable

Product Summary

600 V max.

OFFSET

I +/-

120 mA / 250 mA

10 V - 20 V

OUT

(typ.)

750 ns & 200 ns

540 ns

on/off

Deadtime

up to 5 µs with one external R resistor

Lower di/dt gate driver for better noise immunity

The dual function DT/SD input turns off both

channels

Packages

RoHS compliant

Description

The IRS21091 is a high voltage, high speed power

MOSFET and IGBT driver with dependent high- and

low-side referenced output channels. Proprietary

HVIC and latch immune CMOS technologies enable

ruggedized monolithic construction. The logic input is

compatible with standard CMOS or LSTTL output,

down to 3.3 V logic. The output drivers feature a

high pulse current buffer stage designed for minimum

8 Lead PDIP

IRS21091

8 Lead SOIC

IRS21091S

driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in

the high-side configuration which operates up to 600 V.

Typical Connection

up to 600 V

V_CC

V_B

V_S

LOAD

DT/SD

COM

(Refer to Lead Assignments for

correct configuration). These dia-

grams show electrical connec-

tions only. Please refer to our

Application Notes and DesignTips

for proper circuit board layout.

www.irf.com

12 3 4 5 6 7...20

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