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IRL3705ZSPBF PDF预览

IRL3705ZSPBF

更新时间: 2024-11-24 04:23:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
13页 286K
描述
HEXFET㈢ Power MOSFET

IRL3705ZSPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.03
其他特性:AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):180 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):86 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.008 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):130 W最大脉冲漏极电流 (IDM):340 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRL3705ZSPBF 数据手册

 浏览型号IRL3705ZSPBF的Datasheet PDF文件第2页浏览型号IRL3705ZSPBF的Datasheet PDF文件第3页浏览型号IRL3705ZSPBF的Datasheet PDF文件第4页浏览型号IRL3705ZSPBF的Datasheet PDF文件第5页浏览型号IRL3705ZSPBF的Datasheet PDF文件第6页浏览型号IRL3705ZSPBF的Datasheet PDF文件第7页 
PD - 95579  
IRL3705ZPbF  
AUTOMOTIVE MOSFET  
IRL3705ZSPbF  
Features  
IRL3705ZLPbF  
l
l
l
l
l
l
l
Logic Level  
Advanced Process Technology  
HEXFET® Power MOSFET  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
D
VDSS = 55V  
RDS(on) = 8.0mΩ  
G
Description  
ID = 75A  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processingtechniquestoachieveextremelylowon-  
resistance per silicon area. Additional features of  
thisdesign area175°Cjunctionoperatingtempera-  
ture, fast switching speed and improved repetitive  
avalanche rating . These features combine to make  
thisdesignanextremelyefficientandreliabledevice  
foruseinAutomotiveapplicationsandawidevariety  
of other applications.  
S
D2Pak  
TO-262  
IRL3705ZL  
TO-220AB  
IRL3705Z  
IRL3705ZS  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ T = 25°C  
C
86  
D
D
D
@ T = 100°C  
C
61  
A
(Package Limited)  
@ T = 25°C  
C
75  
340  
DM  
P
@T = 25°C Power Dissipation  
C
130  
W
W/°C  
V
D
Linear Derating Factor  
0.88  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
± 16  
GS  
EAS (Thermally limited)  
120  
180  
mJ  
EAS (Tested )  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
Operating Junction and  
mJ  
T
J
-55 to + 175  
T
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
°C  
STG  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Junction-to-Case  
–––  
0.50  
–––  
–––  
1.14  
–––  
62  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
Junction-to-Ambient (PCB Mount)  
40  
www.irf.com  
1
07/20/04  

IRL3705ZSPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRL3705ZSTRLPBF INFINEON

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Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met
AUIRL3705ZSTRL INFINEON

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AUIRL3705ZS INFINEON

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