Datasheet > IRL3714STRLPBF

IRL3714STRLPBF

更新时间： 2024-10-01 20:55:03

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
12页	230K
描述
Power Field-Effect Transistor, 36A I(D), 20V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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中文翻译

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数据手册

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IRL3714STRLPBF 数据手册

PD - 95580

IRL3714PbF

IRL3714SPbF

IRL3714LPbF

SMPS MOSFET

Applications

HEXFET^®Power MOSFET

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

V_DSS

20V

R_DS(on)max

I_D

36A

20mΩ

l Lead-Free

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRL3714S

TO-262

IRL3714L

TO-220AB

IRL3714

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

140

P_D@T_C= 25°C

P_D@T_C= 70°C

Maximum Power Dissipation

Linear Derating Factor

0.31

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 175

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

3.2

Units

R_θJC

R_θCS

R_θJA

–––

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB mount)ꢀ

–––

°C/W

Notes through are on page 11

www.irf.com

07/20/04

12 3 4 5 6 7...12

中文翻译

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IRL3714ZSPBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRL3714ZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 36A I(D), 20V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
IRL3714ZSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 36A I(D), 20V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
IRL3714ZSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 36A I(D), 20V, 0.016ohm, 1-Element, N-Channel, Silicon, Met