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IRL3715STRL PDF预览

IRL3715STRL

更新时间: 2024-11-26 23:59:43
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
11页 300K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30A I(D) | TO-263AB

IRL3715STRL 数据手册

 浏览型号IRL3715STRL的Datasheet PDF文件第2页浏览型号IRL3715STRL的Datasheet PDF文件第3页浏览型号IRL3715STRL的Datasheet PDF文件第4页浏览型号IRL3715STRL的Datasheet PDF文件第5页浏览型号IRL3715STRL的Datasheet PDF文件第6页浏览型号IRL3715STRL的Datasheet PDF文件第7页 
PD - 94194A  
IRL3715  
IRL3715S  
IRL3715L  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency Isolated DC-DC  
VDSS RDS(on) max  
ID  
†
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
20V  
14mΩ  
54A  
l High Frequency Buck Converters for  
Computer Processor Power  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
IRL3715S  
TO-262  
IRL3715L  
TO-220AB  
IRL3715  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Drain-Source Voltage  
Max.  
20  
Units  
V
VGS  
Gate-to-Source Voltage  
± 20  
V
I
D @ TC = 25°C  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
54†  
38†  
210  
ID @ TC = 100°C  
IDM  
A
PD @TC = 25°C  
PD @TA = 25°C  
Maximum Power Dissipation  
Maximum Power Dissipationꢀ  
Linear Derating Factor  
71  
W
W
3.8  
0.48  
W/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 175  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Junction-to-Case  
–––  
0.50  
–––  
–––  
2.1  
–––  
62  
Case-to-Sink, Flat, Greased Surface „  
Junction-to-Ambient„  
Junction-to-Ambient (PCB mount)ꢀ  
°C/W  
40  
Notes  through †are on page 11  
www.irf.com  
1
6/5/01  

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