Datasheet > IRL3715STRRPBF

IRL3715STRRPBF

更新时间： 2024-11-24 19:57:07

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
12页	225K
描述
Power Field-Effect Transistor, 30A I(D), 20V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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数据手册

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IRL3715STRRPBF 数据手册

PD - 95380

IRL3715PbF

IRL3715SPbF

IRL3715LPbF

SMPS MOSFET

Applications

HEXFET^®Power MOSFET

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

V_DSSR_DS(on)max

I_D

54A

20V

14mΩ

l Lead-Free

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRL3715S

TO-262

IRL3715L

TO-220AB

IRL3715

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Drain-Source Voltage

Max.

Units

V_GS

Gate-to-Source Voltage

± 20

_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

210

I_D@ T_C= 100°C

I_DM

P_D@T_C= 25°C

P_D@T_A= 25°C

Maximum Power Dissipation

Maximum Power Dissipationꢀ

Linear Derating Factor

3.8

0.48

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 175

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

–––

0.50

–––

2.1

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB mount)ꢀ

°C/W

Notes through are on page 11

www.irf.com

06/07/04

12 3 4 5 6 7...12

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