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IRL3714ZSPBF PDF预览

IRL3714ZSPBF

更新时间: 2024-10-01 04:23:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 280K
描述
HEXFET㈢Power MOSFET

IRL3714ZSPBF 数据手册

 浏览型号IRL3714ZSPBF的Datasheet PDF文件第2页浏览型号IRL3714ZSPBF的Datasheet PDF文件第3页浏览型号IRL3714ZSPBF的Datasheet PDF文件第4页浏览型号IRL3714ZSPBF的Datasheet PDF文件第5页浏览型号IRL3714ZSPBF的Datasheet PDF文件第6页浏览型号IRL3714ZSPBF的Datasheet PDF文件第7页 
PD - 95661  
IRL3714ZPbF  
IRL3714ZSPbF  
IRL3714ZLPbF  
HEXFET® Power MOSFET  
Applications  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l Lead-Free  
VDSS RDS(on) max  
Qg  
4.8nC  
16m  
20V  
Benefits  
l Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
IRL3714ZS  
TO-262  
IRL3714ZL  
TO-220AB  
IRL3714Z  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
20  
± 20  
36  
V
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TC = 25°C  
A
D
D
25  
@ TC = 100°C  
140  
35  
DM  
P
P
@TC = 25°C  
@TC = 100°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
W
D
D
18  
Linear Derating Factor  
Operating Junction and  
0.23  
W/°C  
°C  
T
-55 to + 175  
J
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
4.3  
Units  
Rθ  
°C/W  
JC  
CS  
JA  
JA  
Junction-to-Case  
Rθ  
Rθ  
Rθ  
0.50  
–––  
–––  
62  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount)  
Notes  through † are on page 12  
www.irf.com  
1
7/30/04  

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