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IRL3713STRRPBF PDF预览

IRL3713STRRPBF

更新时间: 2024-11-24 13:08:55
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
11页 236K
描述
Power Field-Effect Transistor, 75A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

IRL3713STRRPBF 技术参数

是否Rohs认证:符合生命周期:End Of Life
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:5.08Is Samacsys:N
雪崩能效等级(Eas):1530 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):260 A最大漏极电流 (ID):75 A
最大漏源导通电阻:0.003 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):330 W最大脉冲漏极电流 (IDM):1040 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRL3713STRRPBF 数据手册

 浏览型号IRL3713STRRPBF的Datasheet PDF文件第2页浏览型号IRL3713STRRPBF的Datasheet PDF文件第3页浏览型号IRL3713STRRPBF的Datasheet PDF文件第4页浏览型号IRL3713STRRPBF的Datasheet PDF文件第5页浏览型号IRL3713STRRPBF的Datasheet PDF文件第6页浏览型号IRL3713STRRPBF的Datasheet PDF文件第7页 
PD-94184D  
IRL3713  
IRL3713S  
IRL3713L  
SMPS MOSFET  
Applications  
HEXFET® Power MOSFET  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l High Frequency Buck Converters for  
Computer Processor Power  
VDSS  
30V  
RDS(on) max (mW)  
ID  
260A†  
3.0@VGS = 10V  
l 100%RG Tested  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
IRL3713S  
TO-262  
IRL3713L  
TO-220AB  
IRL3713  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max  
30  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-to-Source Voltage  
± 20  
260  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ T = 25°C  
C
D
D
180  
@ T = 100°C  
C
A
1040  
DM  
P
P
@T = 25°C  
C
Maximum Power Dissipation  
Maximum Power Dissipation  
330  
170  
D
D
W
@Tc = 100°C  
Linear Derating Factor  
2.2  
W/°C  
°C  
TJ, T  
Junction and Storage Temperature Range  
-55 to +175  
STG  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case  
Typ  
Max  
0.45  
–––  
62  
Units  
Rθ  
–––  
0.50  
–––  
–––  
JC  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
RqCS  
°C/W  
Rθ  
JA  
Junction-to-Ambient (PCB Mount)  
Rθ  
40  
JA  
Notes  through ‡ are on page 11  
www.irf.com  
1
11/12/03  

IRL3713STRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
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SMPS MOSFET

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