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IRL3714STRL PDF预览

IRL3714STRL

更新时间: 2024-11-23 23:59:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
11页 129K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB

IRL3714STRL 数据手册

 浏览型号IRL3714STRL的Datasheet PDF文件第2页浏览型号IRL3714STRL的Datasheet PDF文件第3页浏览型号IRL3714STRL的Datasheet PDF文件第4页浏览型号IRL3714STRL的Datasheet PDF文件第5页浏览型号IRL3714STRL的Datasheet PDF文件第6页浏览型号IRL3714STRL的Datasheet PDF文件第7页 
PD - 94175A  
IRL3714  
IRL3714S  
IRL3714L  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency Isolated DC-DC  
VDSS  
RDS(on) max  
ID  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
20V  
20mΩ  
36A  
l High Frequency Buck Converters for  
Computer Processor Power  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
IRL3714S  
TO-262  
IRL3714L  
TO-220AB  
IRL3714  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-to-Source Voltage  
± 20  
V
ID @ TC = 25°C  
ID @ TC = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
36  
31  
A
140  
PD @TC = 25°C  
PD @TC = 70°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
47  
33  
W
W
0.31  
W/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 175  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
3.2  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
–––  
0.50  
–––  
–––  
Case-to-Sink, Flat, Greased Surface „  
Junction-to-Ambient„  
–––  
62  
°C/W  
Junction-to-Ambient (PCB mount)ꢀ  
40  
Notes  through †are on page 11  
www.irf.com  
1
06/19/01  

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