Datasheet > IRL3705ZSTRR

IRL3705ZSTRR

更新时间： 2024-11-27 21:08:31

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	377K
描述
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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IRL3705ZSTRR 数据手册

PD - 95579A

IRL3705ZPbF

IRL3705ZSPbF

Features

IRL3705ZLPbF

HEXFET^®Power MOSFET

Logic Level

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

V_DSS= 55V

R_DS(on)= 8.0mΩ

Description

I_D= 75A

ThisHEXFET^®PowerMOSFETutilizesthelatest

processing techniques to achieve extremely low

on-resistancepersiliconarea.Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These features

combinetomakethisdesignanextremelyefficient

and reliable device for use in a wide variety of

applications.

D²Pak

IRL3705ZSPbF IRL3705ZLPbF

TO-262

TO-220AB

IRL3705ZPbF

Absolute Maximum Ratings

Parameter

Max.

Units

(Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

(Package Limited)

@ T = 25°C

340

@T = 25°C Power Dissipation

130

W/°C

Linear Derating Factor

0.88

Gate-to-Source Voltage

Single Pulse Avalanche Energy

± 16

E_{AS (Thermally limited)}

120

180

E_AS(Tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

°C

STG

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

–––

0.50

–––

1.14

–––

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount)

www.irf.com

10/01/10

12 3 4 5 6 7...12

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