5秒后页面跳转
IRFZ44 PDF预览

IRFZ44

更新时间: 2024-11-20 22:24:07
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 67K
描述
N-channel enhancement mode TrenchMOS transistor

IRFZ44 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.63配置:Single
最大漏极电流 (Abs) (ID):50 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

IRFZ44 数据手册

 浏览型号IRFZ44的Datasheet PDF文件第2页浏览型号IRFZ44的Datasheet PDF文件第3页浏览型号IRFZ44的Datasheet PDF文件第4页浏览型号IRFZ44的Datasheet PDF文件第5页浏览型号IRFZ44的Datasheet PDF文件第6页浏览型号IRFZ44的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
N-channel enhancement mode  
TrenchMOSTM transistor  
IRFZ44N  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
standard level field-effect power  
transistor in a plastic envelope using  
trench’ technology. The device  
features very low on-state resistance  
and has integral zener diodes giving  
ESD protection up to 2kV. It is  
intended for use in switched mode  
power supplies and general purpose  
switching applications.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Ptot  
Tj  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
55  
49  
110  
175  
22  
V
A
W
˚C  
m  
RDS(ON)  
resistance  
VGS = 10 V  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
tab  
gate  
2
drain  
g
3
source  
tab drain  
s
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
ID  
ID  
IDM  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Drain current (DC)  
-
-
-
-
-
-
-
-
55  
55  
20  
49  
35  
160  
110  
175  
V
V
V
A
A
A
W
˚C  
RGS = 20 kΩ  
-
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
Drain current (DC)  
Drain current (pulse peak value)  
Total power dissipation  
Storage & operating temperature  
Ptot  
Tstg, Tj  
- 55  
ESD LIMITING VALUE  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VC  
Electrostatic discharge capacitor  
voltage, all pins  
Human body model  
(100 pF, 1.5 k)  
-
2
kV  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-mb  
Thermal resistance junction to  
mounting base  
-
-
1.4  
K/W  
Rth j-a  
Thermal resistance junction to  
ambient  
in free air  
60  
-
K/W  
February 1999  
1
Rev 1.000  

与IRFZ44相关器件

型号 品牌 获取价格 描述 数据表
IRFZ44_11 VISHAY

获取价格

Power MOSFET
IRFZ44-003PBF INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44-004 INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44-004PBF INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44-005 INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44-005PBF INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44-006PBF INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44-009 INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44-010 INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44-010PBF INFINEON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Met