Datasheet > IRFZ44CN

IRFZ44CN

更新时间： 2024-09-16 11:09:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	122K
描述
isc N-Channel MOSFET Transistor

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中文翻译

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数据手册

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IRFZ44CN 数据手册

INCHANGE Semiconductor

isc Product Specification

isc N-Channel MOSFET Transistor

IRFZ44CN

FEATURES

·Drain Current –I_D=49A@ T_C=25℃

·Drain Source Voltage-

: V_DSS= 55V(Min)

·Static Drain-Source On-Resistance

: R_DS(on)= 0.032Ω(Max)

·Fast Switching

DESCRIPTION

·Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls, these

devices are particularly well suited for bridge circuits where

diode speed and commutating safe operating areas are critical

and offer additional safety margin against unexpected voltage

transients.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

UNIT

Drain-Source Voltage

Gate-Source Voltage-Continuous

Drain Current-Continuous

±20

I_DM

160

Drain Current-Single Pluse (t_p≤10μs)

Total Dissipation @T_C=25℃

P_D

℃

Max. Operating Junction Temperature

Storage Temperature

175

T_J

-55~175

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.5

UNIT

℃/W

R_{th j-c}

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_{th j-a}

isc Website：www.iscsemi.cn

中文翻译

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