Datasheet > IRFSL11N50A, SiHFSL11N50A

IRFSL11N50A, SiHFSL11N50A

更新时间： 2024-11-03 14:52:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	366K
描述
Power MOSFET

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IRFSL11N50A, SiHFSL11N50A 数据手册

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IRFSL11N50A, SiHFSL11N50A

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

I²PAK

(TO-262)

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

Available

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY

V_DS(V)

500

DESCRIPTION

_DS(on)()

Q_g(Max.) (nC)

_gs(nC)

V_GS= 10 V

0.55

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Q_gd(nC)

Configuration

Single

ORDERING INFORMATION

Package

I²PAK (TO-262)

Lead (Pb)-free

IRFSL11N50APbF

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

_C= 25 °C

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

7.0

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.3

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

390

E_AR

Maximum Power Dissipation

T_C= 25 °C

P_D

190

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.1

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting T_J= 25 °C, L = 6.4 mH, R_G= 25 , I_AS= 11 A (see fig. 12)

c. I_SD 11 A, dI/dt  185 A/μs, V_DD V_DS, T_J 175 °C

d. 1.6 mm from case

S21-0932-Rev. C, 13-Sep-2021

Document Number: 91288

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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