IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
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Vishay Siliconix
Power MOSFET
FEATURES
D
• Low gate charge Qg results in simple drive
requirement
DPAK
(TO-252)
IPAK
(TO-251)
• Improved gate, avalanche, and dynamic
dV/dt ruggedness
D
D
G
Available
• Fully
characterized
capacitance
and
avalanche voltage and current
S
G
S
D
G
• Effective Coss specified
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V)
APPLICATIONS
500
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
RDS(on) (Ω)
VGS = 10 V
1.7
Qg (Max.) (nC)
24
6.5
Q
gs (nC)
gd (nC)
Q
13
Configuration
Single
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
Lead (Pb)-free and
halogen-free
SiHFR430A-GE3 SiHFR430ATR-GE3 a SiHFR430ATRL-GE3 a SiHFR430ATRR-GE3 a SiHFU430A-GE3
Lead (Pb)-free
IRFR430APbF
IRFR430ATRPbFa
IRFR430ATRLPbFa
-
IRFU430APbF
Note
a. See device orientation
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
500
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
30
T
C = 25 °C
5.0
Continuous drain current
VGS at 10 V
ID
TC = 100 °C
3.2
A
Pulsed drain current a
IDM
20
Linear derating factor
0.91
130
W/°C
mJ
A
Single pulse avalanche energy b
Repetitive avalanche current a
Repetitive avalanche energy a
Maximum power dissipation
EAS
IAR
5.0
EAR
11
mJ
W
T
C = 25 °C
PD
110
Peak diode recovery dV/dt c
dV/dt
TJ, Tstg
3.0
V/ns
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
-55 to +150
300
°C
For 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Starting TJ = 25 °C, L = 11 mH, Rg = 25 Ω, IAS = 5.0 A (see fig. 12)
c. ISD ≤ 5.0 A, dI/dt ≤ 320 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
S21-0373-Rev. E, 19-Apr-2021
Document Number: 91276
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000