Datasheet > IRFR4615PBF

IRFR4615PBF

更新时间： 2024-11-24 11:59:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
9页	852K
描述
HEXFETPower MOSFET

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中文翻译

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数据手册

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IRFR4615PBF 数据手册

IRFR/U4615PbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

^lUninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

150V

34m

42m

33A

max.

l Hard Switched and High Frequency Circuits

I_D

Benefits

^lImproved Gate, Avalanche and Dynamic dV/dt

Ruggedness

^lFully Characterized Capacitance and Avalanche

SOA

^lEnhanced body diode dV/dt and dI/dt Capability

^lLead-Free

DPak

IRFR4615PbF

IPAK

IRFU4615PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

140

P_D@T_C= 25°C

144

Maximum Power Dissipation

Linear Derating Factor

0.96

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

109

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.045

Units

R_θJC

Junction-to-Case

R_θJA

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

110

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