Datasheet > IRFR4510PBF

IRFR4510PBF

更新时间： 2024-02-23 02:37:50

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
11页	307K
描述
High Efficiency Synchronous Rectification in SMPS

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替代型号

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IRFR4510PBF 数据手册

PD - 97784

IRFR4510PbF

IRFU4510PbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

100V

11.1m

13.9m

63A



l Hard Switched and High Frequency Circuits

56A

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

DPak

IRFR4510PbF

IPAK

IRFU4510PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

Units

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

252

143

P_D@T_C= 25°C

Maximum Power Dissipation

0.95

Linear Derating Factor

W/°C

± 20

V_GS

T_J

Gate-to-Source Voltage

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

°C

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

Avalanche Characteristics

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

127

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.05

Units

R_

Junction-to-Case

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

110

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes through are on page 11

www.irf.com

05/02/12

12 3 4 5 6 7...11

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IRFR4510PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFR4510TRPBF	INFINEON	完全替代	High Efficiency Synchronous Rectification in SMPS

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