Datasheet > IRFR4615

IRFR4615

更新时间： 2023-12-06 19:46:48

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	304K
描述
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

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IRFR4615 数据手册

IRFR4615PbF

IRFU4615PbF

HEXFET^®Power MOSFET

150V

V_DSS

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

R_DS(on)typ.

max.

34m

42m

33A

l Hard Switched and High Frequency Circuits

I_D

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

DPak

IRFR4615PbF

IPAK

IRFU4615PbF

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

Gate

Drain

Source

Standard Pack

Form

Tube/Bulk

Tape and Reel Left

Orderable Part Number

Base Part Number

Package Type

Quantity

3000

IRFR4615PbF

IRFR4615TRLPbF

IRFR4615PbF

IRFR4615TRLPbF

D-PAK

I-PAK

IRFU4615PbF

Tube/Bulk

IRFU4615PbF

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 100°C

I_DM

140

144

0.96

± 20

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

109

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.045

Units

R_θJC

Junction-to-Case

R_θJA

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

110

Notes through are on page 11

May 16, 2013

12 3 4 5 6 7...12

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