Datasheet > IRFR4615

IRFR4615

更新时间： 2024-11-25 14:49:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	304K
描述
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

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IRFR4615 数据手册

IRFR4615PbF

IRFU4615PbF

HEXFET^®Power MOSFET

150V

V_DSS

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

R_DS(on)typ.

max.

34m

42m

33A

l Hard Switched and High Frequency Circuits

I_D

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

DPak

IRFR4615PbF

IPAK

IRFU4615PbF

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

Gate

Drain

Source

Standard Pack

Form

Tube/Bulk

Tape and Reel Left

Orderable Part Number

Base Part Number

Package Type

Quantity

3000

IRFR4615PbF

IRFR4615TRLPbF

IRFR4615PbF

IRFR4615TRLPbF

D-PAK

I-PAK

IRFU4615PbF

Tube/Bulk

IRFU4615PbF

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 100°C

I_DM

140

144

0.96

± 20

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

109

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.045

Units

R_θJC

Junction-to-Case

R_θJA

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

110

Notes through are on page 11

May 16, 2013

12 3 4 5 6 7...12

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与IRFR4615相关器件

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IRFR4615PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR4615PBF	FREESCALE	获取价格	HEXFETPower MOSFET
IRFR4615TRLPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFR4615TRPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR4615TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
IRFR4620	INFINEON	获取价格	The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers
IRFR4620PBF	FREESCALE	获取价格	HEXFETPower MOSFET
IRFR4620PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR4620TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Me
IRFR4620TRPBF	INFINEON	获取价格	HEXFET Power MOSFET