5秒后页面跳转
IRFDC20PBF PDF预览

IRFDC20PBF

更新时间: 2024-10-02 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管光电二极管
页数 文件大小 规格书
8页 1066K
描述
Power MOSFET

IRFDC20PBF 数据手册

 浏览型号IRFDC20PBF的Datasheet PDF文件第2页浏览型号IRFDC20PBF的Datasheet PDF文件第3页浏览型号IRFDC20PBF的Datasheet PDF文件第4页浏览型号IRFDC20PBF的Datasheet PDF文件第5页浏览型号IRFDC20PBF的Datasheet PDF文件第6页浏览型号IRFDC20PBF的Datasheet PDF文件第7页 
IRFDC20, SiHFDC20  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
600  
• Repetitive Avalanche Rated  
• For Automatic Insertion  
• End Stackable  
Available  
RDS(on) (Ω)  
VGS = 10 V  
4.4  
RoHS*  
Qg (Max.) (nC)  
18  
3.0  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Fast Switching  
8.9  
• Ease of Paralleling  
Configuration  
Single  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
D
HEXDIP  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
The 4 pin DIP package is a low cost machine-insertable case  
style which can be stacked in multiple combinations on  
standard 0.1" pin centers. The dual drain serves as a thermal  
link to the mounting surface for power dissipation levels up to  
1 W.  
G
S
G
D
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
HEXDIP  
IRFDC20PbF  
SiHFDC20-E3  
IRFDC20  
Lead (Pb)-free  
SnPb  
SiHFDC20  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
600  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
TC =100°C  
0.32  
Continuous Drain Current  
VGS at 10 V  
ID  
0.20  
A
Pulsed Drain Currenta  
IDM  
2.6  
Linear Derating Factor  
0.0083  
50  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
0.32  
EAR  
0.10  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
1.0  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
3.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 54 mH, RG = 25 Ω, IAS = 1.3 A (see fig. 12).  
c. ISD 4.4 A, dI/dt 90 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91142  
S-Pending-Rev. A, 13-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

与IRFDC20PBF相关器件

型号 品牌 获取价格 描述 数据表
IRFE024 INFINEON

获取价格

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖T
IRFE024 SEME-LAB

获取价格

N-CHANNEL POWER MOSFET
IRFE034 INFINEON

获取价格

Power Field-Effect Transistor, 15.5A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Me
IRFE034PBF INFINEON

获取价格

Power Field-Effect Transistor, 15.5A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Me
IRFE110 INFINEON

获取价格

HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
IRFE110 MOTOROLA

获取价格

Multiple Small-Signal Transistors
IRFE110

获取价格

N-Channel Power MOSFET
IRFE110PBF INFINEON

获取价格

暂无描述
IRFE111 MOTOROLA

获取价格

Multiple Small-Signal Transistors
IRFE113 MOTOROLA

获取价格

Multiple Small-Signal Transistors