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IRFE130 PDF预览

IRFE130

更新时间: 2024-10-01 22:24:07
品牌 Logo 应用领域
SEME-LAB /
页数 文件大小 规格书
2页 21K
描述
N-CHANNEL POWER MOSFET

IRFE130 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:CHIP CARRIER, R-CQCC-N15
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.13其他特性:AVALANCHE ENERGY RATING
雪崩能效等级(Eas):75 mJ外壳连接:SOURCE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):7.4 A最大漏源导通电阻:0.207 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CQCC-N15
元件数量:1端子数量:15
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFE130 数据手册

 浏览型号IRFE130的Datasheet PDF文件第2页 
IRFE130  
MECHANICAL DATA  
Dimensions in mm (inches)  
N–CHANNEL  
POWER MOSFET  
9.14 (0.360)  
8.64 (0.340)  
1.27 (0.050)  
1.07 (0.040)  
VDSS  
100V  
2.16 (0.085)  
12 13 14 15 16  
1.39 (0.055)  
1.02 (0.040)  
ID(cont)  
RDS(on)  
7.44A  
11  
10  
9
17  
18  
1
0.207  
7.62 (0.300)  
7.12 (0.280)  
0.76 (0.030)  
0.51 (0.020)  
8
2
FEATURES  
0.33 (0.013)  
0.08 (0.003)  
Rad.  
7
6
5
4
3
• SURFACE MOUNT  
0.43 (0.017)  
0.18 (0.007  
Rad.  
1.39 (0.055)  
1.15 (0.045)  
1.65 (0.065)  
1.40 (0.055)  
• SMALL FOORPRINT  
• HERMETICALLY SEALED  
• DYNAMIC dv/dt RATING  
LCC4  
• AVALANCHE ENERGY RATING  
• SIMPLE DRIVE REQUIREMENTS  
• LIGHTWEIGHT  
MOSFET  
GATE  
TRANSISTOR  
BASE  
PINS  
4,5  
DRAIN  
COLLECTOR  
EMITTER  
1,2,15,16,17,18  
SOURCE  
6,7,8,9,10,11,12,13  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
V
Gate – Source Voltage  
Continuous Drain Current  
Continuous Drain Current  
±20V  
7.4A  
GS  
I
I
I
(V = 10V , T  
= 25°C)  
D
GS  
case  
(V = 10V , T  
= 100°C)  
4.7A  
D
GS  
case  
1
Pulsed Drain Current  
30A  
DM  
P
Power Dissipation @ T = 25°C  
case  
22W  
D
Linear Derating Factor  
0.17W/°C  
75mJ  
2
E
Single Pulse Avalanche Energy  
AS  
3
dv/dt  
T , T  
Peak Diode Recovery  
5.5V/ns  
-55 to +150°C  
300°C  
Operating and Storage Temperature Range  
Surface Temperature ( for 5 sec).  
J
stg  
Notes  
1) Pulse Test: Pulse Width 300µs, δ ≤ 2%  
2) @ V = 50V , L 570µH , R = 25, Peak I = 14A , Starting T = 25°C  
DD  
G
L
J
3) @ I 14A , di/dt 140A/µs , V BV  
, T 150°C , Suggested R = 7.5Ω  
J G  
SD  
DD  
DSS  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk  
10/98  
Website http://www.semelab.co.uk  

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