是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-CQCC-N18 | 针数: | 18 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.21 | 其他特性: | AVALANCHE ENERGY RATED |
雪崩能效等级(Eas): | 110 mJ | 外壳连接: | SOURCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 6.7 A | 最大漏源导通电阻: | 0.17 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CQCC-N18 |
元件数量: | 1 | 端子数量: | 18 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 27 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | QUAD | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFE034 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 15.5A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Me | |
IRFE034PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 15.5A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Me | |
IRFE110 | INFINEON |
获取价格 |
HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
IRFE110 | MOTOROLA |
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Multiple Small-Signal Transistors | |
IRFE110 |
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N-Channel Power MOSFET | ||
IRFE110PBF | INFINEON |
获取价格 |
暂无描述 | |
IRFE111 | MOTOROLA |
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Multiple Small-Signal Transistors | |
IRFE113 | MOTOROLA |
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Multiple Small-Signal Transistors | |
IRFE120 | INFINEON |
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HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
IRFE120_07 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |