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IRFE024 PDF预览

IRFE024

更新时间: 2024-10-01 22:24:07
品牌 Logo 应用领域
SEME-LAB 晶体晶体管开关脉冲
页数 文件大小 规格书
2页 26K
描述
N-CHANNEL POWER MOSFET

IRFE024 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CHIP CARRIER, R-CQCC-N18针数:18
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.21其他特性:AVALANCHE ENERGY RATED
雪崩能效等级(Eas):110 mJ外壳连接:SOURCE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):6.7 A最大漏源导通电阻:0.17 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CQCC-N18
元件数量:1端子数量:18
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):27 A认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:QUAD晶体管元件材料:SILICON
Base Number Matches:1

IRFE024 数据手册

 浏览型号IRFE024的Datasheet PDF文件第2页 
IRFE024  
MECHANICAL DATA  
Dimensions in mm (inches)  
N–CHANNEL  
POWER MOSFET  
9.14 (0.360)  
8.64 (0.340)  
1.27 (0.050)  
1.07 (0.040)  
VDSS  
60V  
2.16 (0.085)  
12 13 14 15 16  
1.39 (0.055)  
1.02 (0.040)  
ID(cont)  
RDS(on)  
6.7A  
11  
10  
9
17  
18  
1
0.15  
7.62 (0.300)  
7.12 (0.280)  
0.76 (0.030)  
0.51 (0.020)  
8
2
FEATURES  
0.33 (0.013)  
0.08 (0.003)  
Rad.  
7
6
5
4
3
• SURFACE MOUNT  
• SMALL FOOTPRINT  
0.43 (0.017)  
0.18 (0.007  
Rad.  
1.39 (0.055)  
1.15 (0.045)  
1.65 (0.065)  
1.40 (0.055)  
• HERMETICALLY SEALED  
• DYNAMIC dv/dt RATING  
• AVALANCHE ENERGY RATING  
• SIMPLE DRIVE REQUIREMENTS  
• LIGHTWEIGHT  
LCC4  
MOSFET  
GATE  
PADS  
4,5  
DRAIN  
1,2,15,16,17,18  
SOURCE  
6,7,8,9,10,11,12,13  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
V
Gate – Source Voltage  
Continuous Drain Current  
Continuous Drain Current  
±20V  
GS  
I
I
I
(V = 10V , T  
= 25°C)  
6.7A  
4.2A  
D
GS  
case  
(V = 10V , T  
= 100°C)  
D
GS  
case  
1
Pulsed Drain Current  
27A  
DM  
P
Power Dissipation @ T = 25°C  
case  
14W  
D
Linear Derating Factor  
0.11W/°C  
110mJ  
5.5V/ns  
-55 to +150°C  
300°C  
2
E
Single Pulse Avalanche Energy  
AS  
3
dv/dt  
T , T  
Peak Diode Recovery  
Operating and Storage Temperature Range  
Surface Temperature ( for 5 sec).  
J
stg  
Notes  
1) Pulse Test: Pulse Width 300 s,  
2%  
2) @ V = 50V , L 570 H , R = 25 , Peak I = 14A , Starting T = 25°C  
DD  
G
L
J
3) @ I  
14A , di/dt 140A/ s , V  
BV  
, T  
150°C , Suggested R = 7.5  
G
SD  
DD  
DSS  
J
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
02/00  

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