是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | LCC |
包装说明: | CHIP CARRIER, R-CQCC-N15 | 针数: | 18 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.67 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 134 mJ | 外壳连接: | SOURCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.207 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CQCC-N15 |
元件数量: | 1 | 端子数量: | 15 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 32 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFE130SCX | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Met |
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IRFE210 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R |
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IRFE210PBF | INFINEON |
获取价格 |
暂无描述 |
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IRFE220 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
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IRFE220_07 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
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IRFE230 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
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IRFE230 | SEME-LAB |
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N-CHANNEL POWER MOSFET |
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IRFE230SCV | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Me |
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IRFE230SCVPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Me |
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IRFE230SCX | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Me |
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