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IRFE310 PDF预览

IRFE310

更新时间: 2024-02-14 22:38:34
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
7页 139K
描述
HEXFET TRANSISTOR

IRFE310 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:CHIP CARRIER, R-CQCC-N18
Reach Compliance Code:compliant风险等级:5.12
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):0.82 mJ
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:400 V最大漏极电流 (ID):1.2 A
最大漏源导通电阻:3.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CQCC-N18元件数量:1
端子数量:18工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
功耗环境最大值:11 W最大脉冲漏极电流 (IDM):4.8 A
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:QUAD
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):65 ns
最大开启时间(吨):35 nsBase Number Matches:1

IRFE310 数据手册

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PD - 91782  
IRFE310  
JANTX2N6786U  
JANTXV2N6786U  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
[REF:MIL-PRF-19500/556]  
N-CHANNEL  
400Volt, 3.6, HEXFET  
Product Summary  
The leadless chip carrier (LCC) package represents  
the logical next step in the continual evolution of  
surface mount technology. The LCC provides  
designers the extra flexibility they need to increase  
circuit board density. International Rectifier has  
engineered the LCC package to meet the specific  
needs of the power market by increasing the size of  
thebottomsourcepad,therebyenhancingthethermal  
and electrical performance. The lid of the package  
is grounded to the source to reduce RF interference.  
Part Number  
BVDSS  
RDS(on)  
ID  
IRFE310  
400V  
3.6Ω  
1.25A  
Features:  
n
n
n
n
n
n
Hermetically Sealed  
Simple Drive Requirements  
Ease of Paralleling  
Small footprint  
Surface Mount  
Lightweight  
HEXFET transistors also feature all of the well-es-  
tablished advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling  
and electrical parameter temperature stability.They  
are well-suited for applications such as switching  
power supplies, motor controls, inverters, choppers,  
audio amplifiers and high-energy pulse circuits,  
and virtually any application where high reliability  
is required.  
Absolute Maximum Ratings  
Parameter  
IRFE310, JANTX-, JANTXV-, 2N6786U Units  
I
@ V  
= 10V, T = 25°C Continuous Drain Current  
1.25  
D
GS  
C
A
I
D
@ V  
= 10V, T = 100°C Continuous Drain Current  
0.80  
5.5  
GS  
C
I
Pulsed Drain Current   
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
15  
W
W/°C  
V
D
C
0.12  
±20  
V
GS  
E
Single Pulse Avalanche Energy ‚  
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
34  
mJ  
AS  
dv/dt  
2.8  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
300 ( for 5 seconds)  
0.42 (typical)  
Surface Temperature  
Weight  
www.irf.com  
1
10/9/98  

IRFE310 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N6786U INFINEON

完全替代

HEXFET TRANSISTOR
IRFE310PBF INFINEON

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