Datasheet > IRF630S (KRF630S)

IRF630S (KRF630S)

更新时间： 2024-11-26 18:09:19

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科信 - KEXIN		/
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4页	1780K
描述
N-Channel MOSFET

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IRF630S (KRF630S) 数据手册

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SMD Type

MOSFET

N-Channel MOSFET

IRF630S (KRF630S)

■ Features

● VDS (V) = 200V

● ID = 9 A (VGS = 10V)

● R^DS(ON)＜ 400mΩ (VGS = 10V)

● Fast switching

● Low thermal resistance

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

200

±20

Unit

Drain-Gate Voltage

Gate-Source Voltage

Ta = 25℃

Continuous Drain Current

6.3

Ta = 100℃

Pulsed Drain Current

Peak Non-Repetitive Avalanche Current

Power Dissipation

Non-Repetitive Avalanche Energy

Thermal Resistance.Junction- to-Ambient

Thermal Resistance Junction to Mounting Base

Junction Temperature

250

thJA

thJB

℃/W

1.7

175

-55 to 175

℃

Storage Temperature Range

stg

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