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IRF620S

更新时间： 2024-11-12 21:04:11
品牌 Logo 应用领域
威世 - VISHAY 开关晶体管
页数 文件大小 规格书
8页 149K
描述
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN

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IRF620S 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：D2PAK包装说明：SMALL OUTLINE, R-PSSO-G2
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.04
Is Samacsys：N雪崩能效等级（Eas）：110 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：5.2 A
最大漏极电流 (ID)：5.2 A最大漏源导通电阻：0.8 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：50 W
最大脉冲漏极电流 (IDM)：18 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF620S 数据手册

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IRF620S, SiHF620S  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Halogen-free According to IEC 61249-2-21  
200  
Definition  
• Surface Mount  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
• Repetitive Avalanche Rated  
• Fast Switching  
R
DS(on) ()  
VGS = 10 V  
0.80  
Qg (Max.) (nC)  
14  
3.0  
Q
Q
gs (nC)  
gd (nC)  
7.9  
• Simple Drive Requirements  
• Ease of Paralleling  
• Compliant to RoHS Directive 2002/95/EC  
Configuration  
Single  
D
DESCRIPTION  
D2PAK (TO-263)  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The D2PAK (TO-263) is a surface mount power package  
capable of accommodating die size up to HEX-4. It provides  
the highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK (TO-263) is suitable for high current applications  
because of its low internal connection resistance and can  
dissipate up to 2.0 W in a typical surface mount application.  
D
G
S
N-Channel MOSFET  
S
ORDERING INFORMATION  
Package  
Lead (Pb)-free and Halogen-free  
D2PAK (TO-263)  
D2PAK (TO-263)  
SiHF620STRL-GE3a  
IRF620STRLPbFa  
SiHF620STL-E3a  
D2PAK (TO-263)  
SiHF620S-GE3  
IRF620SPbF  
SiHF620S-E3  
SiHF620STRR-GE3a  
IRF620STRRPbFa  
SiHF620STR-E3a  
Lead (Pb)-free  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
Gate-Source Voltage  
SYMBOL  
VDS  
LIMIT  
200  
20  
UNIT  
V
VGS  
TC = 25 °C  
C = 100 °C  
5.2  
Continuous Drain Current  
VGS at 10 V  
ID  
T
3.3  
A
Pulsed Drain Currenta  
IDM  
18  
Linear Derating Factor  
0.40  
0.025  
110  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Avalanche Currenta  
EAS  
IAR  
mJ  
A
5.2  
Repetitive Avalanche Energya  
EAR  
5.0  
mJ  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
TC = 25 °C  
50  
PD  
W
V/ns  
°C  
TA = 25 °C  
3.0  
dV/dt  
5.0  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 6.1 mH, Rg = 25 , IAS = 5.2 A (see fig. 12).  
c. ISD 5.2 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91028  
S11-1046-Rev. D, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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与IRF620S相关器件

型号 品牌 获取价格 描述 数据表
IRF620S, SiHF620S VISHAY

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 		Power MOSFET
IRF620SPBF VISHAY

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 		Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRF620SPBF INFINEON

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 		HEXFET POWER MOSFET (VDSS=200V , RDS(on)=0.80
IRF620STRL INFINEON

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 		暂无描述
IRF620STRL VISHAY

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 		Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRF620STRLPBF VISHAY

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 		Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRF620STRR VISHAY

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 		Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRF620STRRPBF INFINEON

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 		暂无描述
IRF620STRRPBF VISHAY

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 		Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRF620T MOTOROLA

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 		Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal

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