IRF620S, SiHF620S
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
• Surface-mount
D
D2PAK (TO-263)
• Available in tape and reel
• Dynamic dv/dt rating
• Repetitive avalanche rated
• Fast switching
Available
Available
G
• Simple drive requirements
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
D
G
S
S
N-Channel MOSFET
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)
200
DESCRIPTION
RDS(on) ()
VGS = 10 V
0.80
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface-mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface-mount application.
Qg max. (nC)
14
3.0
Q
gs (nC)
gd (nC)
Q
7.9
Configuration
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
D2PAK (TO-263)
SiHF620S-GE3
IRF620SPbF
D2PAK (TO-263)
SiHF620STRL-GE3 a
IRF620STRLPbF a
D2PAK (TO-263)
SiHF620STRR-GE3 a
IRF620STRRPbF a
Note
a. See device orientation
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
Gate-source voltage
VDS
200
20
V
VGS
T
C = 25 °C
5.2
Continuous drain current
VGS at 10 V
ID
TC = 100 °C
3.3
A
Pulsed drain current a
IDM
18
Linear derating factor
0.40
0.025
110
W/°C
Linear derating factor (PCB mount) e
Single pulse avalanche energy b
Avalanche current a
EAS
IAR
mJ
A
5.2
Repetitive avalanche energy a
EAR
5.0
mJ
Maximum power dissipation
T
C = 25 °C
50
PD
W
V/ns
°C
Maximum power dissipation (PCB mount) e
Peak diode recovery dv/dt c
TA = 25 °C
3.0
dv/dt
5.0
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
TJ, Tstg
-55 to +150
300
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 6.1 mH, Rg = 25 , IAS = 5.2 A (see fig. 12)
c. ISD 5.2 A, di/dt 95 A/μs, VDD VDS, TJ 150 °C
d. 1.6 mm from case
e. When mounted on 1" square PCB (FR-4 or G-10 material)
S20-0683-Rev. E, 07-Sep-2020
Document Number: 91028
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000