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IRF620S, SiHF620S PDF预览

IRF620S, SiHF620S

更新时间: 2024-09-25 14:52:35
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威世 - VISHAY /
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9页 212K
描述
Power MOSFET

IRF620S, SiHF620S 数据手册

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IRF620S, SiHF620S  
www.vishay.com  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Surface-mount  
D
D2PAK (TO-263)  
• Available in tape and reel  
• Dynamic dv/dt rating  
• Repetitive avalanche rated  
• Fast switching  
Available  
Available  
G
• Simple drive requirements  
• Ease of paralleling  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Note  
D
G
S
S
N-Channel MOSFET  
*
This datasheet provides information about parts that are  
RoHS-compliant and / or parts that are non RoHS-compliant. For  
example, parts with lead (Pb) terminations are not RoHS-compliant.  
Please see the information / tables in this datasheet for details  
PRODUCT SUMMARY  
VDS (V)  
200  
DESCRIPTION  
RDS(on) ()  
VGS = 10 V  
0.80  
Third generation power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
The D2PAK (TO-263) is a surface-mount power package  
capable of accommodating die size up to HEX-4. It provides  
the highest power capability and the lowest possible  
on-resistance in any existing surface-mount package. The  
D2PAK (TO-263) is suitable for high current applications  
because of its low internal connection resistance and can  
dissipate up to 2.0 W in a typical surface-mount application.  
Qg max. (nC)  
14  
3.0  
Q
gs (nC)  
gd (nC)  
Q
7.9  
Configuration  
Single  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
Lead (Pb)-free  
D2PAK (TO-263)  
SiHF620S-GE3  
IRF620SPbF  
D2PAK (TO-263)  
SiHF620STRL-GE3 a  
IRF620STRLPbF a  
D2PAK (TO-263)  
SiHF620STRR-GE3 a  
IRF620STRRPbF a  
Note  
a. See device orientation  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
200  
20  
V
VGS  
T
C = 25 °C  
5.2  
Continuous drain current  
VGS at 10 V  
ID  
TC = 100 °C  
3.3  
A
Pulsed drain current a  
IDM  
18  
Linear derating factor  
0.40  
0.025  
110  
W/°C  
Linear derating factor (PCB mount) e  
Single pulse avalanche energy b  
Avalanche current a  
EAS  
IAR  
mJ  
A
5.2  
Repetitive avalanche energy a  
EAR  
5.0  
mJ  
Maximum power dissipation  
T
C = 25 °C  
50  
PD  
W
V/ns  
°C  
Maximum power dissipation (PCB mount) e  
Peak diode recovery dv/dt c  
TA = 25 °C  
3.0  
dv/dt  
5.0  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d  
TJ, Tstg  
-55 to +150  
300  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)  
b. VDD = 50 V, starting TJ = 25 °C, L = 6.1 mH, Rg = 25 , IAS = 5.2 A (see fig. 12)  
c. ISD 5.2 A, di/dt 95 A/μs, VDD VDS, TJ 150 °C  
d. 1.6 mm from case  
e. When mounted on 1" square PCB (FR-4 or G-10 material)  
S20-0683-Rev. E, 07-Sep-2020  
Document Number: 91028  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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