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IRF614STRRPBF

更新时间： 2024-11-12 14:51:35
品牌 Logo 应用领域
威世 - VISHAY 开关晶体管
页数 文件大小 规格书
9页 181K
描述
Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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IRF614STRRPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：D2PAK
包装说明：SMALL OUTLINE, R-PSSO-G2针数：4
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：6 weeks风险等级：5.03
外壳连接：DRAIN配置：SINGLE
最小漏源击穿电压：250 V最大漏极电流 (Abs) (ID)：2.7 A
最大漏极电流 (ID)：2.7 A最大漏源导通电阻：2 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：36 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF614STRRPBF 数据手册

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IRF614S, SiHF614S  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Halogen-free According to IEC 61249-2-21  
250  
Definition  
• Surface Mount  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
• Repetitive Avalanche Rated  
• Fast Switching  
• Ease of Paralleling  
• Simple Drive Requirements  
• Compliant to RoHS Directive 2002/95/EC  
DESCRIPTION  
R
DS(on) ()  
VGS = 10 V  
2.0  
Qg (Max.) (nC)  
8.2  
1.8  
Q
Q
gs (nC)  
gd (nC)  
4.5  
Configuration  
Single  
D
D2PAK (TO-263)  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The D2PAK (TO-263) is a surface mount power package  
capable of accommodating die sizes up to HEX-4. It  
provides the highest power capability and the lowest  
possible on-resistance in any existing surface mount  
package. The D2PAK (TO-263) is suitable for high current  
applications because of its low internal connection  
resistance and can dissipate up to 2.0 W in a typical surface  
mount application.  
D
G
S
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and Halogen-free  
D2PAK (TO-263)  
SiHF614S-GE3  
IRF614SPbF  
D2PAK (TO-263)  
D2PAK (TO-263)  
-
IRF614STRLPbFa  
SiHF614STL-E3a  
SiHF614STRR-GE3a  
IRF614STRRPbFa  
SiHF614STR-E3a  
Lead (Pb)-free  
SiHF614S-E3  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
Gate-Source Voltage  
SYMBOL  
VDS  
LIMIT  
250  
20  
UNIT  
V
VGS  
T
C = 25 °C  
2.7  
Continuous Drain Current  
VGS at 10 V  
ID  
TC = 100 °C  
1.7  
A
Pulsed Drain Currenta  
IDM  
8.0  
Linear Derating Factor  
0.29  
0.025  
61  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Avalanche Currenta  
EAS  
IAR  
mJ  
A
2.7  
Repetitive Avalanche Energya  
EAR  
3.6  
mJ  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
TC = 25 °C  
36  
PD  
W
V/ns  
°C  
TA = 25 °C  
3.1  
dV/dt  
4.8  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 13 mH, Rg = 25 , IAS = 2.7 A (see fig. 12).  
c. ISD 2.7 A, dI/dt 65 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91026  
S11-1063-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...9

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