Datasheet > IRF6150

IRF6150

更新时间： 2024-11-11 22:31:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
3页	118K
描述
HEXFET Power MOSFET

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IRF6150 数据手册

OBSOLETE

PD - 93943

IRF6150

HEXFET^®Power MOSFET

l Ultra Low R_SS(on)per Footprint Area

V_SS

-20V

R_SS(on)max

0.036Ω@V_GS1,2= -4.5V -7.9A

I_S

l Low Thermal Resistance

l Bi-Directional P-Channel Switch

l Super Low Profile (<.8mm)

l Available Tested on Tape & Reel

0.052Ω@V_GS1,2= -2.5V -6.3A

Description

True chip-scale packaging is available from International

Rectifier. Through the use of advanced processing tech-

niques and a unique packaging concept, extremely low

on-resistance and the highest power densities in the

industry have been made available for battery and load

managementapplications.Thesebenefits,combinedwith

the ruggedized device design that International Rectifier

is well known for, provides the designer with an ex-

tremely efficient and reliable device.

The FlipFET package, is one-third the footprint of a

comparable SO-8 package and has a profile of less than

.8mm. Combined with the low thermal resistance of the

die level device, this makes the FlipFET the best device

for applications where printed circuit board space is at a

premium and in extremely thin application environments

such as battery packs, cell phones and PCMCIA cards.

Absolute Maximum Ratings

Parameter

Source- Source Voltage

Max.

-20

Units

V_SS

I_S@ T_C= 25°C

I_S@ T_C= 70°C

I_SM

Continuous Current, V_GS1= V_GS2= -4.5V

Pulsed Current

±7.9

±6.3

±40

P_D@T_C= 25°C

P_D@T_C= 70°C

Power Dissipation

3.0

Power Dissipation

1.9

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

± 12

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Symbol

R_θJA

Parameter

Junction-to-Ambient

Typ.

Max.

Units

°C/W

R_θJ-PCB

Junction-to-PCB mounted

–––

www.irf.com

07/26/04

12 3

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