IRF6156

更新时间： 2024-11-11 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关
页数	文件大小	规格书
13页	248K
描述
FlipFET Power MOSFET

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中文翻译

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数据手册

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IRF6156 数据手册

PD - 94592A

IRF6156

l Ultra Low R_SS(on)per Footprint Area

FlipFET Power MOSFET

l Low Thermal Resistance

l Bi-Directional N-Channel Switch

l Super Low Profile (<.8mm)

l Available Tested on Tape & Reel

V_SS

20V

R_SS(on)max

40m @V_GS1,2= 4.5V

I_S

±6.5

60m @V_GS1,2= 2.5V

±5.2

l ESD Protection Diode

Description

True chip-scale packaging is available from International Recti-

fier. Through the use of advanced processing techniques and a

unique packaging concept, extremely low on-resistance and the

highestpowerdensitiesintheindustryhavebeenmadeavailable

for battery and load management applications. These benefits,

combined with the ruggedized device design that International

Rectifier is well known for, provide the designer with an

extremely efficient and reliable device.

TheFlipFET package, isone-fifththefootprintofacomparable

TSSOP-8 package and has a profile of less than .8mm. Com-

bined with the low thermal resistance of the die level device, this

makes the FlipFET the best device for applications where

printed circuit board space is at a premium and in extremely thin

application environments such as battery packs, mobile phones

and PCMCIA cards.

Absolute Maximum Ratings

Parameter

Max.

Units

V_SS

Source-to-Source Voltage

Continuous Current, V_GS1= V_GS2= 4.5V

Pulsed Current

I_S@ T_A= 25°C

I_S@ T_A= 70°C

I_SM

±6.5

±5.2

Power Dissipation

@T_A= 25°C

@T_A= 70°C

2.5

Power Dissipation

1.6

Linear Derating Factor

Gate-to-Source Voltage

mW/°C

±12

Operating Junction and

-55 to + 150

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Ambient

Typ.

–––

Max.

Units

R_θJA

°C/W

R_θJ-PCB

Junction-to-PCB

–––

www.irf.com

09/25/03

12 3 4 5 6 7...13

中文翻译

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