Datasheet > IRF123

IRF123

更新时间： 2024-11-05 22:48:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	71K
描述
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

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数据手册
替代型号

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IRF123 数据手册

IRF120, IRF121,

IRF122, IRF123

Semiconductor

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm,

N-Channel, Power MOSFETs

October 1997

Features

Description

• 8.0A and 9.2A, 80V and 100V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

• r

DS(ON)

= 0.27Ω and 0.36Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Formerly developmental type TA09594.

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Ordering Information

PART NUMBER

IRF120

PACKAGE

TO-204AA

BRAND

IRF120

IRF121

TO-204AA

IRF121

IRF122

IRF123

IRF122

IRF123

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 1565.2

2-1

12 3 4 5 6 7

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IRF123 替代型号

型号	品牌	替代类型	描述	数据表
MTM10N06E	MOTOROLA	功能相似	10A, 60V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
MTM12N05	MOTOROLA	功能相似	Power Field-Effect Transistor, 12A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal

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