Datasheet > 驱动程序和接口 > MOSFET 驱动器> IR2113-2PBF

IR2113-2PBF

更新时间： 2025-07-31 21:54:23

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动器 MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数	文件大小	规格书
18页	328K
描述
HIGH AND LOW SIDE DRIVER

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数据手册

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IR2113-2PBF 数据手册

Data Sheet No. PD60147 rev.

IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF

HIGH AND LOW SIDE DRIVER

Features

Product Summary

• Floating channel designed for bootstrap operation

Fully operational to +500V or +600V

Tolerant to negative transient voltage

dV/dt immune

(IR2110) 500V max.

OFFSET

(IR2113) 600V max.

I +/-

2A / 2A

10 - 20V

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels

• 3.3V logic compatible

OUT

Separate logic supply range from 3.3V to 20V

(typ.)

120 & 94 ns

on/off

Logic and power ground 5V offset

• CMOS Schmitt-triggered inputs with pull-down

• Cycle by cycle edge-triggered shutdown logic

• Matched propagation delay for both channels

• Outputs in phase with inputs

Delay Matching (IR2110) 10 ns max.

(IR2113) 20ns max.

Packages

Description

The IR2110/IR2113 are high voltage, high speed power MOSFET and

IGBT drivers with independent high and low side referenced output chan-

nels. Proprietary HVIC and latch immune CMOS technologies enable

ruggedized monolithic construction. Logic inputs are compatible with

standard CMOS or LSTTL output, down to 3.3V logic. The output

drivers feature a high pulse current buffer stage designed for minimum

16-Lead SOIC

IR2110S/IR2113S

14-Lead PDIP

IR2110/IR2113

driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The

floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which

operates up to 500 or 600 volts.

Typical Connection

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(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical

connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

www.irf.com

12 3 4 5 6 7...18

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