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IR2114SSTRPBF PDF预览

IR2114SSTRPBF

更新时间: 2024-11-18 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动双极性晶体管光电二极管接口集成电路驱动器
页数 文件大小 规格书
33页 753K
描述
Half Bridge Based Peripheral Driver, PDSO24, LEAD FREE, MO-150AH, SSOP-24

IR2114SSTRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SSOP-24Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:16 weeks风险等级:5.21
内置保护:TRANSIENT; OVER CURRENT; UNDER VOLTAGE高边驱动器:YES
输入特性:SCHMITT TRIGGER接口集成电路类型:HALF BRIDGE BASED IGBT DRIVER
JESD-30 代码:R-PDSO-G24JESD-609代码:e3
长度:8.2 mm湿度敏感等级:3
功能数量:1端子数量:24
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:PUSH-PULL输出电流流向:SOURCE AND SINK
封装主体材料:PLASTIC/EPOXY封装代码:SSOP
封装等效代码:SSOP24,.3封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, SHRINK PITCH峰值回流温度(摄氏度):NOT SPECIFIED
电源:15 V认证状态:Not Qualified
座面最大高度:2 mm子类别:MOSFET Drivers
最大供电电压:20 V最小供电电压:11.5 V
标称供电电压:15 V表面贴装:YES
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:0.66 µs接通时间:0.66 µs
宽度:5.3 mmBase Number Matches:1

IR2114SSTRPBF 数据手册

 浏览型号IR2114SSTRPBF的Datasheet PDF文件第2页浏览型号IR2114SSTRPBF的Datasheet PDF文件第3页浏览型号IR2114SSTRPBF的Datasheet PDF文件第4页浏览型号IR2114SSTRPBF的Datasheet PDF文件第5页浏览型号IR2114SSTRPBF的Datasheet PDF文件第6页浏览型号IR2114SSTRPBF的Datasheet PDF文件第7页 
Data Sheet No. PD60213 revL  
IR2114SSPbF/IR2214SSPbF  
HALF-BRIDGE GATE DRIVER IC  
Features  
Product Summary  
Floating channel up to 600 V or 1200 V  
Soft over-current shutdown  
600 V or  
VOFFSET  
1200 V max.  
Synchronization signal to synchronize shutdown with the other phases  
Integrated desaturation detection circuit  
Two stage turn on output for di/dt control  
Separate pull-up/pull-down output drive pins  
Matched delay outputs  
IO+/- (min)  
VOUT  
1.0 A / 1.5 A  
10.4 V – 20 V  
75 ns  
Deadtime matching (max)  
Deadtime (typ)  
330 ns  
Desat blanking time (typ)  
DSH, DSL input voltage  
threshold (typ)  
3 µs  
Undervoltage lockout with hysteresis band  
Lead free  
8.0 V  
Description  
Soft shutdown time (typ)  
9.25 µs  
The IR2114/IR2214 gate driver family is suited to drive a single half bridge in  
power switching applications. These drivers provide high gate driving  
capability (2 A source, 3 A sink) and require low quiescent current, which  
allows the use of bootstrap power supply techniques in medium power  
systems. These drivers feature full short circuit protection by means of power  
transistor desaturation detection and manage all half-bridge faults by  
smoothly turning off the desaturated transistor through the dedicated soft  
shutdown pin, therefore preventing over-voltages and reducing  
electromagnetic emissions. In multi-phase systems, the IR2114/IR2214  
Package  
drivers communicate using  
a dedicated local network (SY_FLT and  
24-Lead SSOP  
FAULT/SD signals) to properly manage phase-to-phase short circuits. The  
system controller may force shutdown or read device fault state through the  
3.3 V compatible CMOS I/O pin (FAULT/SD). To improve the signal immunity  
from DC-bus noise, the control and power ground use dedicated pins  
enabling low-side emitter current sensing as well. Undervoltage conditions in  
floating and low voltage circuits are managed independently.  
Typical connection  
www.irf.com  
14-Aug-09  
© 2009 International Rectifier  
1

IR2114SSTRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IR2214SSPBF INFINEON

完全替代

HALF-BRIDGE GATE DRIVER IC
IR2214SS INFINEON

完全替代

HALF-BRIDGE GATE DRIVER IC
IR2114SS INFINEON

完全替代

HALF-BRIDGE GATE DRIVER IC

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