Data Sheet No. PD60349 revL
IR21141SSPbF/IR22141SSPbF
HALF-BRIDGE GATE DRIVER IC
Features
Product Summary
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Floating channel up to 600 V or 1200 V
Soft over-current shutdown
600 V or
VOFFSET
1200 V max.
Synchronization signal to synchronize shutdown with the other phases
Integrated desaturation detection circuit
Two stage turn on output for di/dt control
Separate pull-up/pull-down output drive pins
Matched delay outputs
IO+/- (min)
VOUT
1.0 A / 1.5 A
10.4 V – 20 V
75 ns
Deadtime matching (max)
Deadtime (typ)
330 ns
Desat blanking time (typ)
DSH, DSL input voltage
threshold (typ)
3 µs
Undervoltage lockout with hysteresis band
Lead free
8.0 V
Description
Soft shutdown time (typ)
9.25 µs
The IR21141/IR22141 gate driver family is suited to drive a single half bridge
in power switching applications. These drivers provide high gate driving
capability (2 A source, 3 A sink) and require low quiescent current, which
allows the use of bootstrap power supply techniques in medium power
systems. These drivers feature full short circuit protection by means of power
transistor desaturation detection and manage all half-bridge faults by
smoothly turning off the desaturated transistor through the dedicated soft
shutdown pin, therefore preventing over-voltages and reducing
electromagnetic emissions. In multi-phase systems, the IR21141/IR22141
Package
drivers communicate using
a dedicated local network (SY_FLT and
24-Lead SSOP
FAULT/SD signals) to properly manage phase-to-phase short circuits. The
system controller may force shutdown or read device fault state through the
3.3 V compatible CMOS I/O pin (FAULT/SD). To improve the signal immunity
from DC-bus noise, the control and power ground use dedicated pins
enabling low-side emitter current sensing as well. Undervoltage conditions in
floating and low voltage circuits are managed independently.
Typical connection
www.irf.com
14-Aug-09
© 2009 International Rectifier
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