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IR2113E6PBF

更新时间： 2024-11-30 13:01:39
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器接口集成电路
页数 文件大小 规格书
14页 128K
描述
Half Bridge Based MOSFET Driver, 2A, CMOS, CQCC16, LCC-18

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IR2113E6PBF 数据手册

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PD - 91882  
IR2113E6  
HIGH AND LOW SIDE DRIVER  
Product Summary  
Features  
n Floating channel designed for bootstrap operation  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
V
600V max.  
2A / 2A  
OFFSET  
I +/-  
O
n Gate drive supply range from 10 to 20V  
n Undervoltage lockout for both channels  
n Separate logic supply range from 5 to 20V  
Logic and power ground ±5V offset  
n CMOS Schmitt-triggered inputs with pull-down  
n Cycle by cycle edge-triggered shutdown logic  
n Matched propagation delay for both channels  
n Outputs in phase with inputs  
V
10 - 20V  
120 & 94 ns  
10 ns  
OUT  
t
(typ.)  
on/off  
Delay Matching  
Description  
The IR2113E6 is a high voltage, high speed power MOSFET  
and IGBT driver with independent high and low side refer-  
enced output channels. Proprietary HVIC and latch immune  
CMOS technologies enable ruggedized monolithic construc-  
tion. Logic inputs are compatible with standard CMOS or  
LSTTL outputs. The output drivers feature a high pulse  
current buffer stage designed for minimum driver cross-con-  
duction. Propagation delays are matched to simplify use in  
high frequency applications. The floating channel can be  
used to drive an N-channel power MOSFET or IGBT in the  
high side configuration which operates up to 600 volts.  
Absolute Maximum Ratings  
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All  
voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissi-  
pation ratings are measured under board mounted and still air conditions. Additional information is shown  
in Figures 28 through 35.  
Symbol  
Parameter  
Min.  
Max.  
V + 20  
S
600  
Units  
V
V
High Side Floating Supply Absolute Voltage  
High Side Floating Supply Offset Voltage  
High Side Output Voltage  
-0.5  
—
B
S
V
HO  
V
-0.5  
V
B
+ 0.5  
20  
S
V
V
Low Side Fixed Supply Voltage  
Low Side Output Voltage  
-0.5  
CC  
V
LO  
-0.5  
-0.5  
V
+ 0.5  
CC  
V
DD  
Logic Supply Voltage  
V
V
V
+ 20  
+ 0.5  
+ 0.5  
SS  
V
SS  
Logic Supply Offset Voltage  
Logic Input Voltage (HIN, LIN & SD)  
Allowable Offset Supply Voltage Transient (Fig. 16)  
V
V
- 20  
- 0.5  
CC  
SS  
CC  
DD  
V
IN  
dV /dt  
S
P
D
—
50  
V/ns  
W
Package Power Dissipation @ T ≤ = 25°C (Fig. 19)  
—
—
1.6  
125  
125  
150  
A
R
thJA  
Thermal Resistance, Junction to Ambient  
Junction Temperature  
°C/W  
T
-55  
-55  
j
°C  
g
T
S
T
L
Storage Temperature  
Package Mounting Surface Temperature  
Weight  
300 (for 5 seconds)  
0.45 (typical)  
www.irf.com  
1
4/13/99  
1234567...14

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