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IR2113L6SCB PDF预览

IR2113L6SCB

更新时间: 2024-11-18 01:21:19
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动
页数 文件大小 规格书
14页 152K
描述
HIGH AND LOW SIDE DRIVER

IR2113L6SCB 数据手册

 浏览型号IR2113L6SCB的Datasheet PDF文件第2页浏览型号IR2113L6SCB的Datasheet PDF文件第3页浏览型号IR2113L6SCB的Datasheet PDF文件第4页浏览型号IR2113L6SCB的Datasheet PDF文件第5页浏览型号IR2113L6SCB的Datasheet PDF文件第6页浏览型号IR2113L6SCB的Datasheet PDF文件第7页 
PD - 91883A  
IR2113L6  
HIGH AND LOW SIDE DRIVER  
Product Summary  
Features  
n Floating channel designed for bootstrap operation  
V
600V max.  
2A / 2A  
OFFSET  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
I +/-  
O
n Gate drive supply range from 10 to 20V  
n Undervoltage lockout for both channels  
n Separate logic supply range from 5 to 20V  
Logic and power ground ±5V offset  
n CMOS Schmitt-triggered inputs with pull-down  
n Cycle by cycle edge-triggered shutdown logic  
n Matched propagation delay for both channels  
n Outputs in phase with inputs  
V
10 - 20V  
120 & 94 ns  
10 ns  
OUT  
t
(typ.)  
on/off  
Delay Matching  
Description  
The IR2113L6 is a high voltage, high speed power MOSFET  
and IGBT driver with independent high and low side referenced  
output channels. Proprietary HVIC and latch immune CMOS  
technologies enable ruggedized monolithic construction. Logic  
inputs are compatible with standard CMOS or LSTTL outputs.  
The output drivers feature a high pulse current buffer stage  
designed for minimum driver cross-conduction. Propagation  
delays are matched to simplify use in high frequency  
applications. The floating channel can be used to drive an N-  
channel power MOSFET or IGBT in the high side configuration  
which operates up to 600 volts.  
Absolute Maximum Ratings  
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All  
voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power  
Dissipation ratings are measured under board mounted and still air conditions.  
Symbol  
Parameter  
Min.  
-0.5  
Max.  
V + 20  
S
600  
Units  
V
B
V
S
High Side Floating Supply Absolute Voltage  
High Side Floating Supply Offset Voltage  
High Side Output Voltage  
V
HO  
V
-0.5  
V
B
+ 0.5  
20  
S
V
V
Low Side Fixed Supply Voltage  
Low Side Output Voltage  
-0.5  
CC  
V
LO  
-0.5  
-0.5  
V
+ 0.5  
CC  
V
Logic Supply Voltage  
V
V
+ 20  
+ 0.5  
+ 0.5  
DD  
SS  
V
SS  
Logic Supply Offset Voltage  
V
- 20  
CC  
SS  
CC  
DD  
V
IN  
Logic Input Voltage (HIN, LIN & SD)  
Allowable Offset Supply Voltage Transient (Fig. 16)  
V
- 0.5  
V
dV /dt  
S
P
D
50  
V/ns  
W
Package Power Dissipation @ T = 25°C (Fig. 19)  
1.6  
75  
A
R
thJA  
Thermal Resistance, Junction to Ambient  
Junction Temperature  
°C/W  
T
-55  
-55  
125  
150  
300  
j
T
Storage Temperature  
°C  
S
L
T
Package Mounting Surface Temperature  
Weight  
1.5 (typical)  
g
www.irf.com  
1
11/09/05  

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