PD - 91883A
IR2113L6
HIGH AND LOW SIDE DRIVER
Product Summary
Features
n Floating channel designed for bootstrap operation
V
600V max.
2A / 2A
OFFSET
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
I +/-
O
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
V
10 - 20V
120 & 94 ns
10 ns
OUT
t
(typ.)
on/off
Delay Matching
Description
The IR2113L6 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side referenced
output channels. Proprietary HVIC and latch immune CMOS
technologies enable ruggedized monolithic construction. Logic
inputs are compatible with standard CMOS or LSTTL outputs.
The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. Propagation
delays are matched to simplify use in high frequency
applications. The floating channel can be used to drive an N-
channel power MOSFET or IGBT in the high side configuration
which operates up to 600 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power
Dissipation ratings are measured under board mounted and still air conditions.
Symbol
Parameter
Min.
-0.5
—
Max.
V + 20
S
600
Units
V
B
V
S
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Output Voltage
V
HO
V
-0.5
V
B
+ 0.5
20
S
V
V
Low Side Fixed Supply Voltage
Low Side Output Voltage
-0.5
CC
V
LO
-0.5
-0.5
V
+ 0.5
CC
V
Logic Supply Voltage
V
V
+ 20
+ 0.5
+ 0.5
DD
SS
V
SS
Logic Supply Offset Voltage
V
- 20
CC
SS
CC
DD
V
IN
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Fig. 16)
V
- 0.5
V
dV /dt
S
P
D
—
50
V/ns
W
Package Power Dissipation @ T ≤ = 25°C (Fig. 19)
—
—
1.6
75
A
R
thJA
Thermal Resistance, Junction to Ambient
Junction Temperature
°C/W
T
-55
-55
125
150
300
j
T
Storage Temperature
°C
S
L
T
Package Mounting Surface Temperature
Weight
1.5 (typical)
g
www.irf.com
1
11/09/05