Datasheet > IR2118C

IR2118C

更新时间： 2024-11-18 19:45:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
18页	169K
描述
MOSFET Driver, CMOS

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技术参数
数据手册

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IR2118C 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
风险等级：	5.69	接口集成电路类型：	BUFFER OR INVERTER BASED MOSFET DRIVER
Base Number Matches：	1

IR2118C 数据手册

Data Sheet No. PD65008

IR2117C/IR2118C

SINGLE CHANNEL DRIVER DIE IN WAFER FORM

Features

Floating channel designed for bootstrap operation

Fully operational to +600V

•

Tolerant to negative transient voltage - dV/dt immune

Gate drive supply range from 10 to 20V

•

Undervoltage lockout

CMOS Schmitt-triggered inputs with pull-down

Output in phase with input IR2117C or out of phase with input IR2118C

Description

The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and

latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with

standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum

cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or

low side configuration which operates up to 600 volts.

Typical Connection

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(Refer to Lead Assignments for correct pin configuration).

This/These diagram(s) show electrical connections only.

Please refer to our Application Notes and DesignTips for

proper circuit board layout.

Note:

! This IR product is100% tested at wafer level and is manufactured using established, mature and well characterized processes.

Due to restrictions in die level processing, die may not be equivalent to standard package products and are therefore offered with

a conditional performance guarantee. The above data sheet is based on IR sample testing under certain predetermined and

assumed conditions, and are provided for illustration purposes only. Customers are encouraged to perform testing in actual

proposed packaged and use conditions. IR die products are tested using IR-based quality assurance procedures and are

manufactured using IR’s established processes. Programs for customer-specified testing are available upon request. IR has

experienced assembly yields of generally 95% or greater for individual die; however, customer’s results will vary. Estimates such

as those described and set forth in this data sheet for semiconductor die will vary depending on a number of packaging, handling,

use and other factors. Sold die may not perform on an equivalent basis to standard package products and are therefore offered

with a limited warranty as described in IR’s applicable standard terms and conditions of sale. All IR die sales are subject to IR’s

applicablestandardtermsandconditionsofsale,whichareavailableuponrequest.Forcustomersrequiringaparticularparameter

to be guaranteed, special testing can be carried out or product can be purchased as known good die.

" Part number shown is for die in wafer. Contact factory for these other options.

www.irf.com

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与IR2118C相关器件

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IR2118PBF	INFINEON	获取价格	SINGLE CHANNEL DRIVER
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IR2118SPBF	INFINEON	获取价格	SINGLE CHANNEL DRIVER
IR2118STR	INFINEON	获取价格	Buffer/Inverter Based MOSFET Driver, 0.5A, CMOS, PDSO8, MS-012AA, SOIC-8
IR2118STRPBF	INFINEON	获取价格	Buffer/Inverter Based MOSFET Driver, 0.5A, CMOS, PDSO8, MS-012AA, SOIC-8
IR-2120UH+-1%B08	VISHAY	获取价格	General Purpose Inductor, 120uH, 1%, Ferrite-Core,
IR-2120UH+-5%EBE2	VISHAY	获取价格	General Purpose Inductor, 120uH, 5%, Ferrite-Core,
IR2121	INFINEON	获取价格	CURRENT LIMITING LOW SIDE DRIVER
IR2121PBF	INFINEON	获取价格	CURRENT LIMITING LOW SIDE DRIVER
IR2122	INFINEON	获取价格	CURRENT SENSING SINGLE CHANNEL DRIVER

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