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IR2118 PDF预览

IR2118

更新时间: 2024-11-17 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
7页 232K
描述
SINGLE CHANNEL DRIVER

IR2118 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DIP,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.33Is Samacsys:N
高边驱动器:YES接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDIP-T8长度:9.88 mm
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
标称输出峰值电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:5.33 mm
最大供电电压:20 V最小供电电压:10 V
标称供电电压:15 V电源电压1-最大:620 V
电源电压1-分钟:5 V表面贴装:NO
技术:CMOS温度等级:AUTOMOTIVE
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:0.18 µs接通时间:0.2 µs
宽度:7.62 mmBase Number Matches:1

IR2118 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Data Sheet No. PD-6.041C  
IR2118  
SINGLE CHANNEL DRIVER  
Features  
Product Summary  
n Floating channel designed for bootstrap operation  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
n Gate drive supply range from 10 to 20V  
n Undervoltage lockout  
V
600V max.  
200 mA / 420 mA  
10 - 20V  
OFFSET  
I +/-  
O
V
OUT  
n CMOS Schmitt-triggered inputs with pull-down  
n Output out of phase with input  
t
(typ.)  
125 & 105 ns  
on/off  
Description  
Packages  
The IR2118 is a high voltage, high speed power  
MOSFET and IGBT driver. Proprietary HVIC and  
latch immune CMOS technologies enable rugge-  
dized monolithic construction. The logic input is  
compatible with standard CMOS outputs. The out-  
put driver features a high pulse current buffer stage  
designed for minimum cross-conduction. The float-  
ing channel can be used to drive an N-channel power  
MOSFET or IGBT in the high or low side configura-  
tion which operates up to 600 volts.  
Typical Connection  
up to 600V  
VCC  
VCC  
IN  
VB  
HO  
VS  
IN  
TO  
LOAD  
COM  
CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL  
B-83  
To Order  
 
 

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