是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.71 | 雪崩能效等级(Eas): | 97 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 45 A | 最大漏极电流 (ID): | 45 A |
最大漏源导通电阻: | 0.0094 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 71 W |
最大脉冲漏极电流 (IDM): | 180 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IPP80N06S4-07 | INFINEON |
类似代替 |
OptiMOS-T2 Power-Transistor | |
IPP45N06S4L-08 | INFINEON |
类似代替 |
OptiMOS-T2 Power-Transistor | |
IPP120N06S4-03 | INFINEON |
类似代替 |
OptiMOS-T2 Power-Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP45N06S4L-08 | INFINEON |
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OptiMOS-T2 Power-Transistor | |
IPP45P03P4L-11 | INFINEON |
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OptiMOS-P2 Power-Transistor | |
IPP45P03P4L11AKSA1 | INFINEON |
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Power Field-Effect Transistor, 45A I(D), 30V, 0.0111ohm, 1-Element, P-Channel, Silicon, Me | |
IPP47N10S-33 | INFINEON |
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SIPMOS Power-Transistor Feature N-Channel Enhancement mode | |
IPP47N10S33AKSA1 | INFINEON |
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Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Me | |
IPP47N10SL-26 | INFINEON |
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SIPMOS Power-Transistor N-Channel Enhancement mode Logic Level | |
IPP47N10SL26AKSA1 | INFINEON |
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Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met | |
IPP50CN10N | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
IPP50CN10NG | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
IPP50CN10NG_10 | INFINEON |
获取价格 |
OptiMOS2 Power-Transistor |