是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 1 week |
风险等级: | 5.82 | 雪崩能效等级(Eas): | 29 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.05 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 80 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP50CN10NGXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Met | |
IPP50N10S3L-16 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor | |
IPP50N12S3L15AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 120V, 0.0209ohm, 1-Element, N-Channel, Silicon, M | |
IPP50R045CP | INFINEON |
获取价格 |
Power Field-Effect Transistor, 62A I(D), 500V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IPP50R140CP | INFINEON |
获取价格 |
CoolMOSTM Power Transistor | |
IPP50R140CPXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Met | |
IPP50R190CE | INFINEON |
获取价格 |
500V Superjunction MOSFET for Consumer and Lighting Applications | |
IPP50R199CP | INFINEON |
获取价格 |
CoolMOSTM Power Transistor | |
IPP50R199CPXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Me | |
IPP50R250CP | INFINEON |
获取价格 |
CoolMOSTM Power Transistor |