是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | GREEN, PLASTIC, TO-220, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.79 | Is Samacsys: | N |
雪崩能效等级(Eas): | 264 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 50 A |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.0209 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 100 W | 最大脉冲漏极电流 (IDM): | 200 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP50N12S3L15AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 120V, 0.0209ohm, 1-Element, N-Channel, Silicon, M | |
IPP50R045CP | INFINEON |
获取价格 |
Power Field-Effect Transistor, 62A I(D), 500V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IPP50R140CP | INFINEON |
获取价格 |
CoolMOSTM Power Transistor | |
IPP50R140CPXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Met | |
IPP50R190CE | INFINEON |
获取价格 |
500V Superjunction MOSFET for Consumer and Lighting Applications | |
IPP50R199CP | INFINEON |
获取价格 |
CoolMOSTM Power Transistor | |
IPP50R199CPXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Me | |
IPP50R250CP | INFINEON |
获取价格 |
CoolMOSTM Power Transistor | |
IPP50R280CE | INFINEON |
获取价格 |
500V Superjunction MOSFET for Consumer and Lighting Applications | |
IPP50R280CEXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |