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IPP50N10S3L-16 PDF预览

IPP50N10S3L-16

更新时间: 2024-10-01 11:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
9页 188K
描述
OptiMOS-T Power-Transistor

IPP50N10S3L-16 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:GREEN, PLASTIC, TO-220, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.79Is Samacsys:N
雪崩能效等级(Eas):264 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):50 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.0209 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPP50N10S3L-16 数据手册

 浏览型号IPP50N10S3L-16的Datasheet PDF文件第2页浏览型号IPP50N10S3L-16的Datasheet PDF文件第3页浏览型号IPP50N10S3L-16的Datasheet PDF文件第4页浏览型号IPP50N10S3L-16的Datasheet PDF文件第5页浏览型号IPP50N10S3L-16的Datasheet PDF文件第6页浏览型号IPP50N10S3L-16的Datasheet PDF文件第7页 
IPB50N10S3L-16  
IPI50N10S3L-16, IPP50N10S3L-16  
OptiMOS®-T Power-Transistor  
Product Summary  
VDS  
100  
15.4  
50  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPB50N10S3L-16  
IPI50N10S3L-16  
IPP50N10S3L-16  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
3N10L16  
3N10L16  
3N10L16  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
Continuous drain current  
50  
37  
A
V
GS=10 V1)  
Pulsed drain current1)  
Avalanche energy, single pulse1)  
I D,pulse  
EAS  
T C=25 °C  
I D=25A  
200  
330  
50  
mJ  
A
I AS  
Avalanche current, single pulse  
Gate source voltage2)  
VGS  
±20  
100  
V
Ptot  
T C=25 °C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
°C  
Rev. 1.1  
page 1  
2008-04-09  

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