Datasheet > IPLU250N04S4-1R7

IPLU250N04S4-1R7

更新时间： 2024-11-06 01:20:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	290K
描述
N-channel - Enhancement mode

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IPLU250N04S4-1R7 数据手册

IPLU250N04S4-1R7

OptiMOS™-T2 Power-Transistor

Product Summary

V_DS

R_DS(on)

I_D

1.7

250

Features

H-PSOF-8-1

Tab

• N-channel - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant); 100% lead free

• Ultra low Rds(on)

Tab

• 100% Avalanche tested

Type

Package

Marking

IPLU250N04S4-1R7

H-PSOF-8-1

4N041R7

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C, V _GS=10V¹⁾

T _C=100°C, V _GS=10V²⁾

I _D

Continuous drain current

250

180

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

1000

170

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=125 A

I _AS

250

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

188

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.0

page 1

2014-12-08

12 3 4 5 6 7...9

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