Datasheet > IPLU250N04S4-1R7

IPLU250N04S4-1R7

更新时间： 2022-02-26 13:43:05

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	290K
描述
N-channel - Enhancement mode

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数据手册

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IPLU250N04S4-1R7 数据手册

IPLU250N04S4-1R7

Values

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics²⁾

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C _iss

C _oss

C_rss

t _d(on)

t _r

6060

1380

7900 pF

1800

V _GS=0 V, V _DS=25 V,

f =1 MHz

105

V _DD=20 V, V _GS=10 V,

I _D=250 A, R _G=3.5 W

t _d(off)

t _f

Turn-off delay time

Fall time

Gate Charge Characteristics²⁾

Gate to source charge

Gate to drain charge

Gate charge total

Q _gs

5.7

100

Q _gd

V _DD=32 V, I _D=250 A,

V _GS=0 to 10 V

Q _g

V _plateau

Gate plateau voltage

Reverse Diode

Diode continous forward current²⁾

Diode pulse current²⁾

I _S

250

T _C=25 °C

I _S,pulse

1000

V _GS=0 V, I _F=100 A,

T _j=25 °C

V _SD

Diode forward voltage

0.9

1.3

Reverse recovery time²⁾

t _rr

V _R=20 V, I _F=50A,

di _F/dt =100 A/µs

Reverse recovery charge²⁾

Q _rr

¹⁾Current is limited by bondwire; with an R _thJC= 0.8 K/W the chip is able to carry 254A at 25°C.

²⁾Defined by design. Not subject to production test.

³⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 1.0

page 3

2014-12-08

1 234 5 6 7...9

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