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IPLU300N04S4R8XTMA1 PDF预览

IPLU300N04S4R8XTMA1

更新时间: 2024-11-05 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON PC脉冲晶体管
页数 文件大小 规格书
9页 286K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IPLU300N04S4R8XTMA1 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:26 weeks风险等级:1.14
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:658674Samacsys Pin Count:12
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Other
Samacsys Footprint Name:IPLU300N04S4R8XTMA1-4Samacsys Released Date:2019-11-26 15:02:53
Is Samacsys:N雪崩能效等级(Eas):290 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):35 A
最大漏极电流 (ID):300 A最大漏源导通电阻:0.00077 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):300 pF
JESD-30 代码:R-MBCC-F2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
功耗环境最大值:2.8 W最大功率耗散 (Abs):89 W
最大脉冲漏极电流 (IDM):400 A子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

IPLU300N04S4R8XTMA1 数据手册

 浏览型号IPLU300N04S4R8XTMA1的Datasheet PDF文件第2页浏览型号IPLU300N04S4R8XTMA1的Datasheet PDF文件第3页浏览型号IPLU300N04S4R8XTMA1的Datasheet PDF文件第4页浏览型号IPLU300N04S4R8XTMA1的Datasheet PDF文件第5页浏览型号IPLU300N04S4R8XTMA1的Datasheet PDF文件第6页浏览型号IPLU300N04S4R8XTMA1的Datasheet PDF文件第7页 
IPLU300N04S4-R8  
OptiMOS-T2 Power-Transistor  
Product Summary  
VDS  
RDS(on)  
ID  
40  
V
0.77  
300  
mW  
A
Features  
H-PSOF-8-1  
Tab  
• N-channel - Enhancement mode  
• AEC qualified  
8
1
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant); 100% lead free  
• Ultra low Rds(on)  
1
8
Tab  
• 100% Avalanche tested  
Type  
Package  
Marking  
4N04R8  
IPLU300N04S4-R8  
H-PSOF-8-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
T C=25°C, V GS=10V1)  
I D  
Continuous drain current  
300  
A
T C=100 °C,  
V GS=10 V2)  
300  
Pulsed drain current2)  
I D,pulse  
E AS  
T C=25 °C  
1200  
750  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=150 A  
mJ  
A
I AS  
-
300  
V GS  
-
±20  
V
P tot  
T C=25 °C  
Power dissipation  
429  
W
°C  
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
Rev. 1.0  
page 1  
2014-08-12  

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