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IPLU300N04S4R8XTMA1 PDF预览

IPLU300N04S4R8XTMA1

更新时间: 2024-01-14 19:18:11
品牌 Logo 应用领域
英飞凌 - INFINEON PC脉冲晶体管
页数 文件大小 规格书
9页 286K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IPLU300N04S4R8XTMA1 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:26 weeks风险等级:1.14
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:658674Samacsys Pin Count:12
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Other
Samacsys Footprint Name:IPLU300N04S4R8XTMA1-4Samacsys Released Date:2019-11-26 15:02:53
Is Samacsys:N雪崩能效等级(Eas):290 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):35 A
最大漏极电流 (ID):300 A最大漏源导通电阻:0.00077 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):300 pF
JESD-30 代码:R-MBCC-F2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
功耗环境最大值:2.8 W最大功率耗散 (Abs):89 W
最大脉冲漏极电流 (IDM):400 A子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

IPLU300N04S4R8XTMA1 数据手册

 浏览型号IPLU300N04S4R8XTMA1的Datasheet PDF文件第1页浏览型号IPLU300N04S4R8XTMA1的Datasheet PDF文件第3页浏览型号IPLU300N04S4R8XTMA1的Datasheet PDF文件第4页浏览型号IPLU300N04S4R8XTMA1的Datasheet PDF文件第5页浏览型号IPLU300N04S4R8XTMA1的Datasheet PDF文件第6页浏览型号IPLU300N04S4R8XTMA1的Datasheet PDF文件第7页 
IPLU300N04S4-R8  
Values  
Parameter  
Symbol  
Conditions  
Unit  
min.  
typ.  
max.  
Thermal characteristics2)  
R thJC  
R thJA  
Thermal resistance, junction - case  
SMD version, device on PCB  
-
-
-
-
-
-
-
0.35 K/W  
minimal footprint  
62  
40  
6 cm2 cooling area3)  
Electrical characteristics, at T j=25 °C, unless otherwise specified  
Static characteristics  
V GS=0 V,  
I D=1 mA  
V (BR)DSS  
Drain-source breakdown voltage  
Gate threshold voltage  
40  
2.0  
-
-
-
V
V GS(th) V DS=V GS, I D=230 µA  
3.0  
0.1  
4.0  
10  
V DS=40 V, V GS=0 V,  
T j=25 °C  
I DSS  
Zero gate voltage drain current  
µA  
V DS=18 V, V GS=0 V,  
T j=85 °C2)  
-
1
20  
I GSS  
V GS=20 V, V DS=0 V  
Gate-source leakage current  
-
-
100 nA  
RDS(on) V GS=10 V, I D=100 A  
Drain-source on-state resistance  
-
0.53  
0.77 mΩ  
Rev. 1.0  
page 2  
2014-08-12  

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