生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.75 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 47 mJ | 外壳连接: | DRAIN |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (ID): | 17 A | 最大漏源导通电阻: | 0.045 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F6 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 60 A |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPG16N10S4-61 | INFINEON |
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IPG16N10S4-61A | INFINEON |
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车规级MOSFET | |
IPG16N10S4L-61A | INFINEON |
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? 仿真/SPICE 型号 | |
IPG16N10S4L61AATMA1 | INFINEON |
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MOSFET 2N-CH 8TDSON | |
IPG20N04S4-08 | INFINEON |
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OptiMOS-T2 Power-Transistor | |
IPG20N04S4-08A | INFINEON |
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Power Field-Effect Transistor | |
IPG20N04S408AATMA1 | INFINEON |
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Power Field-Effect Transistor, | |
IPG20N04S408ATMA1 | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 40V, 0.0076ohm, 2-Element, N-Channel, Silicon, Me | |
IPG20N04S4-09 | INFINEON |
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OptiMOS-T2 Power-Transistor | |
IPG20N04S4-09A | INFINEON |
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This Dual SS08 MOSFET can replace two DPAKs for significant PCB area savings and system le |