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IPG20N04S4L-08A PDF预览

IPG20N04S4L-08A

更新时间: 2024-11-21 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 245K
描述
车规级MOSFET

IPG20N04S4L-08A 数据手册

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IPG20N04S4L-08A  
OptiMOS-T2 Power-Transistor  
Product Summary  
VDS  
40  
8.2  
20  
V
4)  
RDS(on),max  
mW  
A
ID  
Features  
• Dual N-channel Logic Level - Enhancement mode  
PG-TDSON-8-10  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
• Feasible for automatic optical inspection (AOI)  
Type  
Package  
Marking  
IPG20N04S4L-08A  
PG-TDSON-8-10  
4N04L08  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current  
one channel active  
T C=25 °C, V GS=10 V1)  
I D  
20  
20  
80  
A
T C=100 °C,  
V GS=10 V2)  
Pulsed drain current2)  
one channel active  
I D,pulse  
-
Avalanche energy, single pulse2, 4)  
Avalanche current, single pulse4)  
Gate source voltage  
E AS  
I AS  
I D=10A  
145  
15  
mJ  
A
-
V GS  
-
±16  
V
Power dissipation  
one channel active  
P tot  
T C=25 °C  
54  
W
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
°C  
Rev. 1.0  
page 1  
2015-09-16  

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