Datasheet > IPG16N10S4-61

IPG16N10S4-61

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	744K
描述

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中文翻译

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数据手册

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IPG16N10S4-61 数据手册

IPG16N10S4-61

OptiMOS™-T2 Power-Transistor

Product Summary

V_DS

100

R_DS(on),max

I_D

Features

• Dual N-channel Normal Level - Enhancement mode

PG-TDSON-8-4

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• RoHS compliant

• 100% Avalanche tested

Type

Package

Marking

IPG16N10S4-61

PG-TDSON-8- 4N1061

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current

one channel active

I _D

T _C=25 °C, V _GS=10 V

T _C=100 °C,

V _GS=10 V¹⁾

Pulsed drain current¹⁾

one channel active

I _D,pulse

Avalanche energy, single pulse^{1, 3)}

Avalanche current, single pulse³⁾

Gate source voltage

E _AS

I _AS

I _D=8A

V _GS

±20

Power dissipation

one channel active

P _tot

T _C=25 °C

T _j, T _stg

Operating and storage temperature

Rev. 1.2

-55 ... +175

°C

page 1

2022-08-24

12 3 4 5 6 7...9

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