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IPG16N10S4-61 PDF预览

IPG16N10S4-61

更新时间: 2024-03-12 21:01:44
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英飞凌 - INFINEON /
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描述

IPG16N10S4-61 数据手册

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IPG16N10S4-61  
OptiMOS™-T2 Power-Transistor  
Product Summary  
VDS  
100  
61  
V
3)  
RDS(on),max  
mW  
ID  
16  
A
Features  
• Dual N-channel Normal Level - Enhancement mode  
PG-TDSON-8-4  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• RoHS compliant  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPG16N10S4-61  
PG-TDSON-8- 4N1061  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current  
one channel active  
I D  
T C=25 °C, V GS=10 V  
16  
A
T C=100 °C,  
V GS=10 V1)  
11  
64  
Pulsed drain current1)  
one channel active  
I D,pulse  
-
Avalanche energy, single pulse1, 3)  
Avalanche current, single pulse3)  
Gate source voltage  
E AS  
I AS  
I D=8A  
33  
10  
mJ  
A
-
V GS  
-
±20  
V
Power dissipation  
one channel active  
P tot  
T C=25 °C  
29  
W
T j, T stg  
Operating and storage temperature  
Rev. 1.2  
-
-55 ... +175  
°C  
page 1  
2022-08-24  

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