Datasheet > IPD50R520CP_08

IPD50R520CP_08

更新时间： 2024-10-30 11:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	303K
描述
CoolMos Power Transistor

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中文翻译

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数据手册

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IPD50R520CP_08 数据手册

Type

IPD50R520CP

CoolMOS^TMPower Transistor

Package

Product Summary

_DS@T_jmax

R _DS(on),max

Q _g,typ

550

0.520

• Lowest figure of merit R_ONx Q_g

• Ultra low gate charge

Ω

• Extreme dv/dt rated

• High peak current capability

• Pb-free lead plating; RoHS compliant

• Quailfied according to JEDEC¹⁾for target applications

PG-TO252

CoolMOS CP is designed for:

• Hard- & Softswitching SMPS topologies

• DCM PFC for Lamp ballast

• PWM for Lamp Ballast, PDP and LCD TV

Type

Package

Marking

IPD50R520CP

PG-TO252

5R520P

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

7.1

4.5

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

I _D=2.5 A, V _DD=50 V

Avalanche energy, single pulse

Avalanche energy, repetitive t _AR

166

2),3)

E _AR

0.25

2.5

I _AR

Avalanche current, repetitive t _AR

MOSFET dv /dt ruggedness

Gate source voltage

_DS=0...400 V

dv /dt

V _GS

V/ns

±20

static

±30

AC (f >1 Hz)

T _C=25 °C

P _tot

Power dissipation

T _j, T _stg

-55 ... 150

Operating and storage temperature

°C

Rev. 2.1

page 1

2008-04-10

12 3 4 5 6 7...10

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