Datasheet > IPD230N06NG_08

IPD230N06NG_08

更新时间： 2024-09-15 05:39:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体转换器晶体管
页数	文件大小	规格书
9页	515K
描述
OptiMOS® Power-Transistor Features For dc/dc converters and sync. rectification

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPD230N06NG_08 数据手册

IPD230N06N G

OptiMOS^®Power-Transistor

Product Summary

Features

V_DS

• For dc/dc converters and sync. rectification

• N-channel enhancement - normal level

R _DS(on),max

I _D

mΩ

• 175 °C operating temperature

• Pb-free lead plating, RoHS compliant

• Avalanche rated

IPD230N06N G

Type

PG-TO252-3

230N06N

Package

Marking

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

TC=25 °C¹⁾

I _D

Continuous drain current

T _C=100 °C

T _C=25 °C²⁾

I _D,pulse

Pulsed drain current

120

150

E_AS

I _D=30 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=30 A, V_DS=48 V,

di/dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

V_GS

Gate source voltage

±20

P_tot

T _C=25 °C

Power dissipation

100

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾Current is limited by bondwire;with an R_thJC=1.5 K/W the chip is able to carry 43 A.

²⁾See figure 3

Rev. 1.2

page 1

2008-09-01

12 3 4 5 6 7...9

中文翻译

下载PDF

与IPD230N06NG_08相关器件

型号	品牌	获取价格	描述	数据表
IPD230N06NGBTMA1	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Met
IPD250N06N3G	INFINEON	获取价格	OptiMOS(TM)3 Power-Transistor
IPD2545	ETC	获取价格	Optoelectronic
IPD2547	ETC	获取价格	Optoelectronic
IPD2547A	INFINEON	获取价格	LED Display, 4-Character, 6.4mm
IPD2548	ETC	获取价格	Optoelectronic
IPD25CN10N G	INFINEON	获取价格	英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SM
IPD25CN10NG	INFINEON	获取价格	OptiMOS㈢2 Power-Transistor
IPD25CNE8NG	INFINEON	获取价格	OptiMOS㈢2 Power-Transistor
IPD25DP06NM	INFINEON	获取价格	OptiMOS™ P-channel MOSFETs 60V in DPAK packag