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IMZ1AT148 PDF预览

IMZ1AT148

更新时间: 2024-11-09 14:51:35
品牌 Logo 应用领域
罗姆 - ROHM 光电二极管晶体管
页数 文件大小 规格书
4页 54K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SC-74, 6 PIN

IMZ1AT148 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-74
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.78
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-G6JESD-609代码:e1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:TIN SILVER COPPER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):180 MHz
Base Number Matches:1

IMZ1AT148 数据手册

 浏览型号IMZ1AT148的Datasheet PDF文件第2页浏览型号IMZ1AT148的Datasheet PDF文件第3页浏览型号IMZ1AT148的Datasheet PDF文件第4页 
EMZ1 / UMZ1N / IMZ1A  
Transistors  
General purpose transistor  
(dual transistors)  
EMZ1 / UMZ1N / IMZ1A  
zFeatures  
zExternal dimensions (Units : mm)  
1) Both a 2SA1037AK chip and 2SC241ZK chip in a  
EMT or UMT or SMT package.  
EMZ1  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
2) Mounting possible with EMT3 or UMT3 or SMT3  
automatic mounting machines.  
1.2  
1.6  
3) Transistor elements are independent, eliminating  
interference.  
Each lead has same dimensions  
4) Mounting cost and area can be cut in half.  
ROHM  
: EMT6  
Abbreviated symbol : Z1  
UMZ1N  
zStructure  
NPN / PNP epitaxial planar silicon transistor  
1.25  
2.1  
zEquivalent circuit  
0.1Min.  
Each lead has same dimensions  
EMZ1 / UMZ1N  
IMZ1A  
ROHM  
EIAJ  
:
UMT6  
(3) (2) (1)  
(4) (5) (6)  
:
SC-88  
Abbreviated symbol : Z1  
Tr1  
Tr1  
Tr2  
Tr2  
IMZ1A  
(4) (5) (6)  
(3) (2) (1)  
1.6  
2.8  
zAbsolute maximum ratings (Ta = 25°C)  
0.3to0.6  
Limits  
Each lead has same dimensions  
Parameter  
Symbol  
Unit  
Tr  
1
Tr2  
ROHM  
EIAJ  
:
SMT6  
:
SC-74  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
60  
50  
7
60  
50  
6  
V
V
Abbreviated symbol : Z1  
V
I
C
150 150  
150 (TOTAL)  
300 (TOTAL)  
150  
mA  
1
2
EMZ1, UMZ1N  
IMZ1A  
Power  
PC  
mW  
dissipation  
Junction temperature  
Storage temperature  
Tj  
˚C  
˚C  
Tstg  
55 +150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  

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