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IMZA120R014M1H PDF预览

IMZA120R014M1H

更新时间: 2024-11-07 14:56:11
品牌 Logo 应用领域
英飞凌 - INFINEON 开关DC-DC转换器双极性晶体管功率因数校正二极管栅极
页数 文件大小 规格书
16页 1436K
描述
采用TO247-4封装的1200V 14mΩ??CoolSiCTM?碳化硅MOSFET基于先进的沟槽工艺,该工艺经过优化兼具性能与可靠性。与IGBT和MOSFET等传统的硅(Si)基器件相比,SiC MOSFET具有诸多优势,例如1200 V开关器件中最低的栅极电荷和器件电容、体二极管没有反向恢复损耗、关断损耗受温度影响小以及没有拐点电压的导通特性。因此,CoolSiC?碳化硅 MOSFET非常适用于硬开关和谐振开关拓扑结构,如功率因素校正(PFC)电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。

IMZA120R014M1H 数据手册

 浏览型号IMZA120R014M1H的Datasheet PDF文件第2页浏览型号IMZA120R014M1H的Datasheet PDF文件第3页浏览型号IMZA120R014M1H的Datasheet PDF文件第4页浏览型号IMZA120R014M1H的Datasheet PDF文件第5页浏览型号IMZA120R014M1H的Datasheet PDF文件第6页浏览型号IMZA120R014M1H的Datasheet PDF文件第7页 
IMZA120R014M1H  
CoolSiC 1200 V SiC Trench MOSFET  
CoolSiC 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology  
Features  
• VDSS = 1200 V at Tvj = 25°C  
• IDDC = 127 A at Tc = 25°C  
• RDS(on) = 14 mΩ at VGS = 18 V, Tvj = 25°C  
• Very low switching losses  
• Short circuit withstand time 3 µs  
• Benchmark gate threshold voltage, VGS(th) = 4.2 V  
• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied  
• Robust body diode for hard commutation  
• .XT interconnection technology for best-in-class thermal performance  
Potential applications  
• General purpose drives (GPD)  
• EV-Charging  
• Online UPS/Industrial UPS  
• String inverter  
• Solar power optimizer  
Product validation  
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22  
Description  
1 – drain  
2 – source  
3 – Kelvin sense contact  
4 – gate  
Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L )  
Type  
Package  
Marking  
IMZA120R014M1H  
PG-TO247-4-STD-NT3.7  
12M1H014  
Datasheet  
www.infineon.com  
Please read the sections "Important notice" and "Warnings" at the end of this document  
Revision 1.30  
2023-05-08  

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